Abstract:Traditional semiconductor detectors such as silicon and germanium are easily affected by ambient temperature and charge-particle ion's radiation. They can't work stably in harsh environments such as high temperature and strong radiation for a long time. In this paper, 4H-silicon carbide detectors based on a Schottky barrier diode (SBD) were fabricated and the combined influences of high temperatures and heavy ion irradiation on 4H–SiC detectors have been investigated. With no radiation, the 4H–SiC detectors have excellent I–V characteristics performance during a temperature range of 30–200 °C. Even at an ambient temperature of 200 °C, the leakage current of the 4H–SiC detector was only 107 nA at the full depletion voltage. Then 280 KeV C 4+ heavy ions were used to irradiate the 4H-silicon carbide detectors, and the performances of the irradiated detectors were studied for different radiation doses from 1×10 13 to 1×10 16 ions/cm 2 in a certain higher ambient temperature environment. For the fully depleted 4H-silicon carbide detectors in an ambient temperature of 140 °C, both the I–V characteristics and the energy resolution have shown a certain radiation damage at the radiation fluence of 1×10 15 ions/cm 2 , while a significant deterioration was observed when the radiation fluence is up to 1×10 16 ions/cm 2 . It means that the 4H–SiC detectors can withstand an irradiation dose of 1×10 15 ions/cm 2 at 140 °C. The time-dependent I–V curves were also investigated for the irradiated detectors for a standing time up to 192 hours, and it's found that the irradiated detectors had minor changes in the leakage currents during a long time standing. A PN junction model with current and voltage equations was used to explain the phenomenon that the reverse leakage current increases with the increase of temperature. The surface recombination model was also used to explain the deterioration of I–V characteristics and energy resolution after irradiation.

Advances in High-Resolution Radiation Detection Using 4H-SiC Epitaxial Layer Devices

Fabrication and characterization of high-resolution 4H-SiC epitaxial radiation detectors for challenging reactor dosimetry environments

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

4H-SiC Schottky Barrier Diodes as Radiation Detectors: A Review

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Enhancement of radiation detection performance with reduction of EH6/7 deep levels in n-type 4H–SiC through thermal oxidation

Characterisation of SiC radiation detector technologies with synchrotron X-rays

Influence of heavy ion irradiation and high temperature on the performance of 4H–SiC Schottky barrier α particle detector

High-temperature and reliability performance of 4H-SiC Schottky-barrier photodiodes for UV detection

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

TCAD modeling of radiation-induced defects in 4H-SiC diodes

Design and simulation of a novel 4H-SiC LGAD timing device

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

High Sensitivity X-Ray Detectors Based on 4H-Sic P-I-n Structure with 80μm Thick Intrinsic Layer

Design, fabrication and testing of Al/p-Si Schottky and pn junctions for radiation studies

Timing Performance Simulation for 3D 4H-SiC Detector

Numerical and Analytical Study of 6H-Sic Detectors with High UV Performance

TCAD Simulations of Radiation Damage in 4H-SiC

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Electrical and Spectroscopic Properties of SiC Detectors

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing