Abstract:Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decrease with the increase of irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low gain avalanche detector avoids crosstalk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise. Thus, the 4H-SiC particle detector, especially the low gain avalanche detector has the potential to detect the minimal ionized particles (MIPs) under extreme irradiation and high temperature environments. In this work, the emphasis was placed on the design of a 4H-SiC Low Gain Avalanche Detector (LGAD), especially the epitaxial structure and technical process which played the main roles. In addition, a simulation tool--RASER(RAdiation SEmiconductoR) was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed. The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 $\pm$ 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.

Design and simulation of a novel 4H-SiC LGAD timing device

Design and Simulation of 4H-Sic Low Gain Avalanche Diode

Charge Collection Performance of 4H-SiC LGAD

Simulation of the 4H-SiC Low Gain Avalanche Diode

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Timing Performance Simulation for 3D 4H-SiC Detector

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

Design and testing of LGAD sensor with shallow carbon implantation

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

Fast Timing With Silicon Carbide Low Gain Avalanche Detectors

Design of AC-coupled Low Gain Avalanche Diodes (Ac-Lgads): a 2D TCAD Simulation Study

Study on 4H-SiC Schottky Diode Alpha-particle Detector

Time Resolution of the 4H-SiC PIN Detector

Design and Characterization of a Low-Noise Front-End Readout ASIC in 0.18- $\mu$ M CMOS Technology for CZT/Si-PIN Detectors

Design of High-Precision Time Measurement Prototype ASIC for the LGAD Readout

Design of a Low-Power Front-End Readout ASIC Based on Energy-Efficient Amplifiers, Featured 126 e-(rms), 0.6 mW/Channel for Si-PIN Detectors

Design of a Prototype Analog Front-End ASIC for the LGAD Readout

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

26.5 ps Time Resolution Using 50 μm Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Improved Performance of SiC Radiation Detector Based on Metal–insulator–semiconductor Structures