Abstract:Low Gain Avalanche Detectors (LGAD) are based on a n++-p+-p-p++ structure where an appropriate doping of the multiplication layer (p+) leads to high enough electric fields for impact ionization. Gain factors of few tens in charge significantly improve the resolution of timing measurements, particularly for thin detectors, where the timing performance was shown to be limited by Landau fluctuations. The main obstacle for their operation is the decrease of gain with irradiation, attributed to effective acceptor removal in the gain layer. Sets of thin sensors were produced by two different producers on different substrates, with different gain layer doping profiles and thicknesses (45, 50 and 80 um). Their performance in terms of gain/collected charge and leakage current was compared before and after irradiation with neutrons and pions up to the equivalent fluences of 5e15 cm-2. Transient Current Technique and charge collection measurements with LHC speed electronics were employed to characterize the detectors. The thin LGAD sensors were shown to perform much better than sensors of standard thickness (~300 um) and offer larger charge collection with respect to detectors without gain layer for fluences <2e15 cm-2. Larger initial gain prolongs the beneficial performance of LGADs. Pions were found to be more damaging than neutrons at the same equivalent fluence, while no significant difference was found between different producers. At very high fluences and bias voltages the gain appears due to deep acceptors in the bulk, hence also in thin standard detectors.

Low Gain Avalanche Detectors with Good Time Resolution Developed by IHEP and IME for ATLAS HGTD project

Design and testing of LGAD sensor with shallow carbon implantation

Effects of shallow carbon and deep N++ layer on the radiation hardness of IHEP-IME LGAD sensors

Design and development of Low Gain Avalanche Detectors using Teledyne e2v process

Beam Test Results of NDL Low Gain Avalanche Detectors (LGAD)

Design of AC-coupled Low Gain Avalanche Diodes (Ac-Lgads): a 2D TCAD Simulation Study

Gain and time resolution of 45 $μ$m thin Low Gain Avalanche Detectors before and after irradiation up to a fluence of $10^{15}$ n$_{eq}$/cm$^2$

Performance in beam tests of Carbon-enriched irradiated Low Gain Avalanche Detectors for the ATLAS High Granularity Timing Detector

Characterization of the response of IHEP-IME LGAD with shallow carbon to Gamma Irradiation

Design and simulation of a novel 4H-SiC LGAD timing device

Radiation Hardness of Thin Low Gain Avalanche Detectors

Advances in the TCAD modelling of non-irradiated and irradiated Low-Gain Avalanche Diode sensors

Laboratory and beam-test performance study of a 55$~μ$m pitch iLGAD sensor bonded to a Timepix3 readout chip

Investigation of low gain avalanche detectors exposed to proton fluences beyond 10$^{15}$ n$_\mathrm{eq}$cm$^{-2}$

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Optimization of capacitive coupled Low Gain Avalanche Diode (AC-LGAD) sensors for precise time and spatial resolution

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications

26.5 ps Time Resolution Using 50 μm Low Gain Avalanche Detectors Fabricated by Micron Semiconductor Ltd

The performance of large-pitch AC-LGAD with different N+ dose

TCAD simulation of AC-LGADs

Gain suppression mechanism observed in Low Gain Avalanche Detectors