Transient Behaviour Analysis in Silicon Carbide Alpha Particle Detector Using TCAD and SRIM Simulation

Xiaoying He,Pengcheng Cao,Zhangyu Lu,Lan Rao,Xiangjun Xin
DOI: https://doi.org/10.1088/1402-4896/ad5236
2024-06-01
Physica Scripta
Abstract:Time response characteristics of α particle detector is crucial for monitoring radiation fields varied with time and its characterization of pulse radiation field. Here, SRIM-informed TCAD simulation is utilized to visually investigate the transient behaviors of carrier and alpha particles in 4H-SiC Schottky barrier detectors for the time response characteristics. We identified external bias voltage and incident particle energy as key factors to influence transient current pulse broadening. Low-energy alpha particles result in low initial kinetic energy of the ionization-generated carriers, leading to transient current broadening and reduced time resolution characteristics. Conversely, high-energy alpha particles ionize carrier with high drift velocity, preventing the broadening effect. Our simulation provides a planform and valuable guidance for optimizing alpha particle detector, selecting appropriate bias voltages, and enhancing time resolution capabilities.
physics, multidisciplinary
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