Abstract:The unique electrical and material properties of 4H-silicon-carbide (4H-SiC) make it a promising candidate material for high rate particle detectors. In contrast to the ubiquitously used silicon (Si), 4H-SiC offers a higher carrier saturation velocity and larger breakdown voltage, enabling a high intrinsic time resolution and mitigating pile-up effects. Additionally, as radiation hardness requirements grow more demanding, wide-bandgap materials such as 4H-SiC could offer better performance. In this work, the detector performance of 50 micron thick 4H-SiC p-in-n planar pad sensors was investigated at room temperature, using an 241Am alpha source at reverse biases of up to 1100 V. Samples subjected to neutron irradiation with fluences of up to 1e16/cm^2 were included in the study in order to quantify the radiation hardness properties of 4H-SiC. The obtained results are compared to previously performed UV-TCT studies. Samples exhibit a drop in charge collection efficiency (CCE) with increasing irradiation fluence, partially compensated at high reverse bias voltages far above full depletion voltage. A plateau of the collected charges is observed in accordance with the depletion of the volume the alpha particles penetrate for an unirradiated reference detector. For the neutron-irradiated samples, such a plateau only becomes apparent at higher reverse bias. For the highest investigated fluence, CCE behaves almost linearly with increasing reverse bias. Compared to UV-TCT measurements, the reverse bias required to deplete a sensitive volume covering full energy deposition is lower, due to the small penetration depth of the alpha particles. At the highest reverse bias, the measured CCE values agree well with earlier UV-TCT studies, with discrepancies between 1% and 5%.

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Comparison of Radiation Detection Performance of Silicon Carbide and Silicon Detector

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Study on 4H-SiC Schottky Diode Alpha-particle Detector

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Study of the characteristics of an irradiated 4H-SiC charge particle detector

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

GaN-based PIN alpha particle detectors

Transient Behaviour Analysis in Silicon Carbide Alpha Particle Detector Using TCAD and SRIM Simulation

Performance of neutron-irradiated 4H-Silicon Carbide diodes subjected to Alpha radiation

Charge Transport Mechanism of Self-Powered GaN P-I-n Α-Particle Detector

Electric Field Measurement by Edge Transient Current Technique on Silicon Low Gain Avalanche Detector

Comparison of Neutron Detection Performance of Four Thin-Film Semiconductor Neutron Detectors Based on Geant4

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TCAD simulations of internal amplification in high purity germanium detectors