Abstract:Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decrease with the increase of irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low gain avalanche detector avoids crosstalk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise. Thus, the 4H-SiC particle detector, especially the low gain avalanche detector has the potential to detect the minimal ionized particles (MIPs) under extreme irradiation and high temperature environments. In this work, the emphasis was placed on the design of a 4H-SiC Low Gain Avalanche Detector (LGAD), especially the epitaxial structure and technical process which played the main roles. In addition, a simulation tool--RASER(RAdiation SEmiconductoR) was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed. The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 $\pm$ 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

Low-Voltage p-i-n GaN-Based Alpha-Particle Detector With High Energy Resolution

GaN-based PIN alpha particle detectors

Alpha Particle Detection Based on Low Leakage and High-Barrier Vertical PtOx/β-Ga2O3 Schottky Barrier Diode

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles

GaN-Based Low-Energy X-Ray Single Photon Detector with Photon Energy Resolution and Fast Response

Photocurrent Property of GaN on the Si Photodetector with a Nearly Polycrystalline Α-Al2o3 Buffer Layer

The high energy resolution of Pt/Si alpha particle detector with Al2O3 passivation layer

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure

Growth and Photocurrent Property of GaN/anodic Alumina/si

Study of Ⅰ-Ⅴ Characteristics of Free Standing GaN-based Nuclear Radiation Detectors

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Influence of Algan/Gan Interface Polarization Fields on the Properties of Photoconductive Detectors

Ultra-Low Dark Current AlGaN-Based Solar-Blind Metal–Semiconductor–Metal Photodetectors for High-Temperature Applications

GaN MSM Photodetectors Fabricated on Bulk GaN with Low Dark‐current and High UV/visible Rejection Ratio

Design and simulation of a novel 4H-SiC LGAD timing device

M-Plane Α-Ga₂o₃ Solar-Blind Detector with Record-High Responsivity-Bandwidth Product and High-Temperature Operation Capability

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection