Abstract:Studies of the radiation tolerance and electrical behavior of gallium nitride (GaN) based devices are important for the next generation of high-power and high-voltage electronics that may be subjected to harsh environments such as nuclear reactor and fusion facilities, particle accelerators, and post-denotation environments. In this work, we study the behavior of Ga-polar and N-polar GaN Schottky diodes before and after exposure to fast and thermal + fast neutrons. Temperature-dependent current–voltage ( I–V ) and circular transmission line method (CTLM) measurements were used to study the electrical characteristics. A strong reduction in reverse leakage current and an increase in differential resistance in forward bias were observed after neutron irradiation. Thermionic emission (TE), Frenkel–Poole (FP) emission, and Fowler–Nordheim (FN) tunneling models were used to explain the forward and reverse I–V characteristics pre- and post-irradiation. The study confirms that Ga-polar and N-polar GaN Schottky diodes exhibit different electrical responses to fast and thermal neutron irradiations. The reverse bias characteristics of N-polar diodes are less affected after the fast neutron irradiation compared to Ga-polar diodes, while in the forward bias region, the electrical behavior after fast and thermal neutron irradiations is similar in Ga-polar and N-polar diodes. The results indicate that the role of orientation should be considered in the design of GaN-based radiation-tolerant electronics.

Study of Ⅰ-Ⅴ Characteristics of Free Standing GaN-based Nuclear Radiation Detectors

Abnormal characteristic measurement of GaN Schottky junction UV detectors

Analysis and Performance of a High Responsivity GaN Schottky-Barrier Ultraviolet Detector

Transient Current Analysis of GaN Neutron Detector Based on the SRIM and TCAD Methods

Alpha particle detector with planar double Schottky contacts directly fabricated on semi-insulating GaN:Fe template*

Effect of Asymmetric Schottky Barrier on GaN-based Metal-Semiconductor-metal Ultraviolet Detector

Study of the characteristics of an irradiated 4H-SiC charge particle detector

Fabrication and Characterization of GaN Based P-i-n Avalanche Photodetectors

Experimental analysis of the electric field distribution in semi-insulating GaAs detectors via alpha particles

Charge Transport Mechanism of Self-Powered GaN P-I-n Α-Particle Detector

GaN-based PIN alpha particle detectors

GaN Schottky Barrier Ultraviolet Detector

Real-time Gamma Irradiation Effects on Long-Wavelength InAs/GaSb Type II Superlattice Infrared Detector

A Study on the Gain Performance of SiC Ultraviolet Photodetectors at High Reverse Biased Voltage

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Graphene GaN-Based Schottky Ultraviolet Detectors

Studies on the surface treatment of InAs/GaSb type-II super-lattice long-wave infrared detectors

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

Investigation of Current-Voltage Characteristics of N- GaN/ I- Al X Ga 1-X N /n -Gan Structures

A Study on the Spectral Response of Back-Illuminated P-I-n AlGaN Heterojunction Ultraviolet Photodetector

Highly-Rectifying Graphene/GaN Schottky Contact for Self-Powered UV Photodetector