Abstract:AlGaN/GaN High Election Mobility Transistor (HEMT), due to its excellent electrical performance and strong radiation resistance, has important application prospects in satellite communications, radar, nuclear reactors and other extreme environments. Heavy ion radiation mainly causes single-event effect and displacement damage effect in AlGaN/GaN HEMT devices. In this paper, the displacement damage defects introduced by heavy ion radiation are analyzed in detail. With the increase of heavy ion radiation influence, more defects are introduced by displacement damage. These defects reduce the 2DEG concentration through carrier capture and removal effect, and reduce the carrier mobility through scattering mechanism, resulting in gradual degradation of the electrical characteristics of the device. In this paper, AlGaN/GaN high electron mobility transistors irradiated by 181 Ta 32+ with fluence of 1×10 8 ions/cm 2 、1×10 9 ions/cm 2 and 1×10 10 ions/cm 2 are used to measure the electrical characteristics, EMMI and low-frequency noise characteristics of the device before and after heavy ion radiation. The results show that heavy ion radiation can lead to the degradation of electrical parameters. When the heavy ion radiation dose reaches 1×10 10 ions/cm 2 , the electrical characteristics of the device deteriorate seriously, the threshold voltage shifts forward by 25%, and the drain saturation current deteriorates obviously. The defect locations introduced by irradiation were analyzed by EMMI test, and it was found that the number of "hot spots" increased significantly after the injection of heavy ion radiation of 1×10 10 ions/cm 2 , indicating that radiation leads to the increase of defect density and serious damage to the device. Through the noise test, it is found that with the increase of the radiation fluence, the current noise power spectral density gradually increases. When the fluence reached 1×10 10 ions/cm 2 , the defect density increased to 3.19×10 18 cm -3 eV -1 , and the Hooge parameter increased after heavy ion radiation. We believe that radiation leads to increased defect density and parasitic series resistance of AlGaN/GaN HEMT devices, resulting in larger Hooge parameters. Through the function of the normalized power spectral density of the drain current noise and the bias voltage, it is found that the defects caused by heavy ion radiation will cause the parasitic series resistance to increase.

Effects of Gamma Irradiation on AlGaN Schottky UV Detector

Total ionizing dose effects in passivated and unpassivated AlGaN/GaN HEMTs

Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Effects of high-dose gamma-ray irradiation on an In0.53Ga0.47As high electron mobility transistor

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Study of Irradiation Induced Changes of Electrical and Functional Characteristics in Ge Doped Si Diodes

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Photoresponse Study of Visible Blind GaN/AlGaN P-I-n Ultraviolet Photodetector

Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

Fast neutron irradiation effects on AlGaN deep ultraviolet light emitting diodes

Gallium vacancy displacement damage induced by 1 MeV neutron irradiation in β-Ga2O3 solar-blind photodetector

Effect of heavy ion radiation on low frequency noise of AlGaN/GaN high electron mobility transistors

Characterization of trap states in AlN/GaN superlattice channel high electron mobility transistors under total-ionizing-dose with 60Co γ-irradiation

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Total Ionizing Dose and Annealing Effects on Shift for p-GaN Gate AlGaN/GaN HEMTs

Gamma-Ray Irradiation Effects on Fourier Transform Infrared Grazing Incidence Reflection-Absorption Spectra of Gan Films

Study of Gamma-Ray Radiation Effects on the Passivation Properties of Atomic Layer Deposited Al2O3 on Silicon Using Deep-Level Transient Spectroscopy

Study on Irradiation Effect and Damage Mechanism in Cascode GaN HEMT Irradiated by 10 MeV Electron

Effect of Asymmetric Schottky Barrier on GaN-based Metal-Semiconductor-metal Ultraviolet Detector

Proton Irradiation Effects on Dual Delta-Doped AlGaAs/InGaAs/AlGaAs Pseudomorphic High-Electron-Mobility Transistors