Abstract:A systematic investigation of the electrical characteristics of $\beta$-Ga$_2$O$_3$ Schottky barrier diodes (SBDs) has been conducted under high dose $^{60}$Co gamma radiation up to 5 Mrad (Si). Initial exposure of the diodes to 1 Mrad (Si) resulted in a significant decrease in on-current by $\sim$78% and an increase in on-resistance from $\sim$3 m$\Omega \cdot$cm$^2$ to $\sim$14 m$\Omega \cdot$cm$^2$ compared to the pre-radiation condition, likely due to the generation of radiation-induced deep-level acceptor traps. However, upon exposure to higher doses of gamma radiation (3 and 5 Mrad (Si)) over a prolonged duration, the device performance partially recovered due to a radiation annealing effect. This effect is facilitated by secondary electrons generated through Compton scattering, which dissipate kinetic energy as heat throughout the lattice, thereby annealing the trapping centers responsible for device performance degradation. The capacitance-voltage (C-V) characterization revealed that the net carrier concentration in the $\beta$-Ga$_2$O$_3$ drift layer reduced from $\sim$3.19 $\times$ 10$^{16}$ cm$^{-3}$ to $\sim$3.05 $\times$ 10$^{16}$ cm$^{-3}$ after 5 Mrad (Si) irradiation. Temperature-dependent I-V characteristics showed that irradiation leads to a reduction in both forward and reverse current across all investigated temperatures ranging from 25 to 250$^\circ$C, accompanied by slight increases in on-resistance, ideality factors, and Schottky barrier heights. The reverse breakdown characteristics of the $\beta$-Ga$_2$O$_3$ SBDs showed a slight increase of the breakdown voltage after radiation. Overall, $\beta$-Ga$_2$O$_3$ Schottky diode exhibits high resilience to gamma irradiation, with performance degradation mitigated by radiation-induced self-recovery, highlighting its potential for radiation-hardened electronic applications in extreme environments.

Improvement in Schottky barrier inhomogeneities of Ni/AlGaN/GaN Schottky diodes after cumulative γ-ray irradiation

Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Radiation Resilience of $β$-Ga$_2$O$_3$ Schottky Barrier Diodes Under High Dose Gamma Radiation

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Defect-free Ni/GaN Schottky barrier behavior with high temperature stability

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Effects of X-ray Irradiation on Vertical GaN-on-GaN Schottky Barrier Diode Biased on the Applied Voltage

Effects of hydrogen irradiation on the electrical properties of dilute nitride GaAsN Schottky diodes

Effects Of the γ- radiation on the electrical characteristics of the Au/n-Si/Au-Sb Schottky diode

Effects of fast and thermal neutron irradiation on Ga-polar and N-polar GaN diodes

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky Contacts on Measurement Temperature and Thermal Annealing

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effect of Neutron Irradiation on Current-Voltage Characteristics of Packaged Diodes Based on 6H-SiC pn Structures

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Recovery at room temperature annealing on 4H–SiC SBDs by gamma irradiation

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Temperature Dependence of Total Ionizing Dose Effects of β-Ga2O3 Schottky Barrier Diodes