Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effects of Fluorine Plasma Treatment on Au-Free Ohmic Contacts to Ultrathin-Barrier AlGaN/GaN Heterostructure

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Improved Schottky Barrier Characteristics for AlInN/GaN Diodes by Oxygen Plasma Treatment

Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Fluorine-plasma Surface Treatment for Gate Forward Leakage Current Reduction in AlGaN/GaN HEMTs

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

The Annealing Effect Of Schottky Contact On Algan/Gan

Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In 0.18 Al 0.82 N/GaN heterostructures

Fluorine Plasma Treatment Induced Deep Level Traps and Their Effect on Current Transportation in Al0.83in0.17n/Aln/Gan Schottky Barrier Diodes

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Effect of Oxygen Plasma Treatment on the Performance of Recessed AlGaN/GaN Schottky Barrier Diodes