Abstract:To be compatible with the mainstream nano CMOS technology and to further increase the density and to reduce power consumption of non-volatile memory, high-k dielectric will become the major technology option for next generation non-volatile memory technology. To ensure the required retention time and to maintain the scalability of floating gate memory transistor, the charge store in future memory transistor should be accompanied with the high-k insolated metal or conductive clusters, islands, or nano-particles. This work proposes a simple method to fabricate high-k isolated metal cluster array. An HfO2/Au/HfO2 stack was first grown by using atomic layer deposition (ALD) and thermal evaporation, respectively, for HfO2 and Au film deposition. After a high-temperature thermal annealing, a number of HfO2-buried Au islands with diameter of about 5 to10nm were obtained. Capacitance–voltage (C–V) measurements show that the charge storage characteristics of the Au-embedded HfO2 structure were affected greatly by the annealing conditions. Depending on the annealing temperature (it should be governed by thickness of Au layer also), the thermal annealing may lead to the formation of Au islands/clusters, the improvement of HfO2 blocking property as a result of defect removal, or the deterioration of the blocking property of HfO2 due to the crystallization of HfO2 film. Process optimization should be conducted for further improving the charge localization characteristics.

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

Thermal Stability and Electrical Properties of Pulsed Laser Deposited Hf–aluminate Thin Films for High-K Gate Dielectric Applications

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Robust High-Quality Hfn-Hfo2 Gate Stack For Advanced Mos Device Applications

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with in Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition

Enhanced Leakage Current Properties of Hfo2/Gan Gate Dielectric Stack by Introducing an Ultrathin Buffer Layer