Abstract:Ge gate stacks by exposing oxygen plasma to ALD Al2O3/Ge were proposed.GeOx formed between Al2O3 and Ge significantly reduces interface state density.High electron mobility of 690cm2/Vs in Ge nMOSFETs with EOT of 0.7-0.8nm.High hole mobility of 546cm2/Vs in Ge p-MOSFETs with EOT of 0.7-0.8nm. CMOS utilizing high mobility Ge channels on Si substrates is expected to be one of promising devices for high performance and low power advanced LSIs. Here, one of the most critical issues in Ge MOSFETs is the realization of gates stacks with superior MOS interfaces. We have proposed novel Ge gate stack technology using ultrathin Ge oxide interfacial layers (ILs). The Ge ILs are formed by exposing ECR oxygen plasma to thin Al2O3 on Ge substrates, which is called plasma post oxidation. Here, Al2O3 serves as a sufficient oxygen barrier that suppresses the growth of unnecessarily-thick GeOx IL, thanks to its intrinsic oxygen permeability. The relationship between the GeOx thickness and interface state density (Dit) is evaluated. Also, in order to further reduce EOT, we have introduced a revised version of gate stack formation using HfO2/Al2O3 stacks. The role of ultrathin Al2O3 films on the properties of the gate stacks is studied. As a result, HfO2/Al2O3/GeOx/Ge gate stacks having EOT of 0.72nm as the thinnest value have been realized with the excellent interface quality. High electron mobility of 754 and 690cm2/Vs and hole mobility of 596 and 546cm2/Vs have been obtained in EOT of 0.82 and 0.76nm, respectively.

Characterization of Hfo2/Al2o3 Gate Dielectric Nanometer-Stacks Grown by Atomic Layer Deposition on Ge Substrates

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Nitrogen-Concentration Modulated Interface Quality, Band Alignment and Electrical Properties of Hftion/Ge Gate Stack Pretreated by Trimethylaluminum Precursor

Preparation of High-Quality Gate Dielectrics for Ge MOSFET's in Wet Ambients

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Hfo2/Al2o3/Ge Gate Stacks with Small Capacitance Equivalent Thickness and Low Interface State Density

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Improved thermal stability and electrical properties of atomic layer deposited HfO2/AlN high-k gate dielectric stacks on GaAs

Low Temperature Formation of Higher-K Cubic Phase Hfo2 by Atomic Layer Deposition on Geox/Ge Structures Fabricated by In-Situ Thermal Oxidation

Improved interfacial and electrical properties of atomic layer deposition HfO2 films on Ge with La2O3 passivation

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Interfacial, Electrical, and Band Alignment Characteristics of HfO2/Ge Stacks with in Situ-Formed SiO2 Interlayer by Plasma-Enhanced Atomic Layer Deposition