Abstract:Electric field crowding at the Schottky edge and Schottky barrier lowering induced leakage current are two major problems that limit the performance of GaN-on-GaN vertical SBD. In this paper, we try to solve these issues. On one hand, a planar edge termination method based on high-energy fluorine ion implantation is explored for high voltage vertical GaN SBD. The space charge induced field modulation effect (SCIFM) is discovered in the ion implanted region. The electrons injected in the implanted region could effectively reduce the surface electric field, alleviating the field crowding at the metal edge. The SBD terminated with high-energy fluorine implanted region presents a breakdown voltage of 1300 V. Utilizing the depletion effect of space charges, the leaky path through the implanted region is partially blocked by the high-energy fluorine ion implanted guard rings. The reverse leakage current of SBD with guard rings is reduced by nearly 3 orders at the reverse bias of 300 V without the deterioration of forward characteristics. On the other hand, the fluorine ion implantation based quasi-JBS structure is investigated to shield the electric field seen by the Schottky contact and reduce the Schottky barrier lowering induced leakage current. The turn-on voltage modulation effect and improved breakdown voltage are observed in the fabricated quasi-JBS diodes, confirming the validity of the SCIFM mechanism in the ion implanted region.

Fluorine Plasma Treatment Induced Deep Level Traps and Their Effect on Current Transportation in Al0.83in0.17n/Aln/Gan Schottky Barrier Diodes

Improving the Performance of Deep Recessed Anode AlGaN/GaN Schottky Barrier Diode by Post Etching Treatment

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

Improvement on Leakage Current for High Al-content AlGaN Schottky Diode by Fluoride-based Plasma Treatment

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Improved Schottky Barrier Characteristics for AlInN/GaN Diodes by Oxygen Plasma Treatment

Fluorine-plasma Surface Treatment for Gate Forward Leakage Current Reduction in AlGaN/GaN HEMTs

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Fluorine IMP effect on negative bias temperature instability and process induced defects

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Persistent Photoconductivity and Carrier Transport in AlGaN∕GaN Heterostructures Treated by Fluorine Plasma

Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode

Control of Threshold Voltage of Algan/Gan Hemts by Fluoride-Based Plasma Treatment: from Depletion Mode to Enhancement Mode

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier with High Blocking Voltage and Low Forward Voltage Drop

Characterization of Fluorine‐plasma‐induced Deep Centers in AlGaN/GaN Heterostructure by Persistent Photoconductivity

Effect of Oxygen Plasma Treatment on the Performance of Recessed AlGaN/GaN Schottky Barrier Diodes

Investigation of Trap States and Reverse Leakage in Fully-Vertical GaN Schottky Barrier Diodes with Laser Lift-Off Substrate

Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors