Abstract:Electric field crowding at the Schottky edge and Schottky barrier lowering induced leakage current are two major problems that limit the performance of GaN-on-GaN vertical SBD. In this paper, we try to solve these issues. On one hand, a planar edge termination method based on high-energy fluorine ion implantation is explored for high voltage vertical GaN SBD. The space charge induced field modulation effect (SCIFM) is discovered in the ion implanted region. The electrons injected in the implanted region could effectively reduce the surface electric field, alleviating the field crowding at the metal edge. The SBD terminated with high-energy fluorine implanted region presents a breakdown voltage of 1300 V. Utilizing the depletion effect of space charges, the leaky path through the implanted region is partially blocked by the high-energy fluorine ion implanted guard rings. The reverse leakage current of SBD with guard rings is reduced by nearly 3 orders at the reverse bias of 300 V without the deterioration of forward characteristics. On the other hand, the fluorine ion implantation based quasi-JBS structure is investigated to shield the electric field seen by the Schottky contact and reduce the Schottky barrier lowering induced leakage current. The turn-on voltage modulation effect and improved breakdown voltage are observed in the fabricated quasi-JBS diodes, confirming the validity of the SCIFM mechanism in the ion implanted region.

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier with High Blocking Voltage and Low Forward Voltage Drop

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

Design and Optimization of Vertical GaN PiN Diodes with Fluorine-Implanted Termination

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

Design of Fluorine-Ion-Based Junction Termination Extension for Vertical GaN Schottky Rectifier

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Fully-Vertical GaN-on-SiC Schottky Barrier Diode: Role of Conductive Buffer Structure

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

High Breakdown Voltage AlGaN/GaN HEMT with Graded Fluorine Ion Implantation Terminal in Thick Passivation Layer

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Fabrication And Characterization Of Vertical Gan Schottky Barrier Diodes With Boron-Implanted Termination

High Voltage GaN Vertical FinFET with a Compatible Integrated Fin Diode for Low Reverse Conduction Loss.

2.5 Kv/1.95 GW/cm2 AlGaN/GaN-Based Lateral Schottky Barrier Diodes with a High-k Field Plate to Reduce Reverse Current

A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment