Abstract:PN diodes with multi-kilovolt breakdown voltages have been demonstrated to great than 6 kV in GaN, validating the device potential predicted by the intrinsic material properties of III-nitride semiconductors. However, power control circuits also require switching transistors such as junction field effect transistors (JFETs) and practical diodes such as merged PIN Schottky (MPS) diodes. Such devices usually employ selective areas of p-type semiconductor surrounded by n-type material and require the formation of PN junctions with low reverse leakage current. Selective-area p-type doping in Si and SiC based power devices is typically achieved using implantation and thermal annealing to form the p-type areas. Ion implantation of Mg in GaN has demonstrated p-type conductivity, but this process requires specialized equipment for the high-pressure and high-temperature activation of Mg dopants. We have investigated selective-area-regrowth (SArG) to epitaxially grow p-type GaN as an alternative to dopant implantation. Successful PN diode formation by SArG requires a process to remove residual crystalline damage resulting from the ex-situ inductively coupled plasma (ICP) etch typically used to form the p-well, as well as a method to remove the elevated level of Si found at the regrowth interface of a surface that had been exposed to air. For the case of SArG of p-GaN on air-exposed, blanket ICP etched n-type GaN, we present the novel use of a fluorine-based precursor (XeF2) for in-situ etching of GaN in the MOCVD chamber. Unlike chlorine (TBCl and CCl4) and bromine (CBr4) -based precursors we have studied; we obtained a smooth surface following in-situ fluorine etching of air-exposed GaN. Schottky barrier diodes (SBDs) formed by shadow mask evaporation on in-situ fluorine etched n-GaN that had been previously ICP etched showed reverse leakage currents to -40 V that are equal to those of SBDs formed on as-grown n-GaN layers. The in-situ fluorine/ICP etched Schottky diodes had reverse leakage currents more than 3 orders of magnitude lower than those formed on n-GaN layers that had only experienced ICP etching. This suggests that the in-situ fluorine etch was effective at removing the residual damage from the ICP etch process. Furthermore, we discuss the use of in-situ fluorine etching to reduce the concentration of Si at the regrowth interface required to form PN junctions with low reverse leakage current. This work was supported in part by the Advanced Research Projects Agency – Energy (ARPA-E), U.S. Department of Energy under the PNDIODES program directed by Dr. Isik Kizilyalli, and in part by the US Department of Energy (DOE) Vehicle Technologies Office (VTO) under the Electric Drive Train Consortium. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA-0003525. The views expressed in the presentation do not necessarily represent the views of the U.S. Department of Energy or the United States Government.

High Voltage Vertical GaN-on-GaN Schottky Barrier Diode with High Energy Fluorine Ion Implantation Based on Space Charge Induced Field Modulation (SCIFM) Effect

High-voltage vertical GaN-on-GaN Schottky barrier diode using fluorine ion implantation treatment

A GaN-on-Si Quasi-Vertical Schottky Barrier Diode with Enhanced Performance Using Fluorine Ion-Implanted Field Rings

Physical Mechanism of Field Modulation Effects in Ion Implanted Edge Termination of Vertical GaN Schottky Barrier Diodes

Quasi-Vertical GaN-on-Silicon Schottky Barrier Diode Terminated With Hydrogen Modulated In-Situ pn Junction

Vertical GaN Schottky Barrier Diode with Hybrid PNiO Junction Termination Extension

High-Voltage and High-I ON /I OFF Quasi-Vertical GaN-on-Si Schottky Barrier Diode With Argon-Implanted Termination

Reverse leakage and breakdown mechanisms of vertical GaN-on-Si Schottky barrier diodes with and without implanted termination

0.58 Mω;cm2/523 V GaN Vertical Schottky Barrier Diode with 15.6 Ka/cm2; Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

1.4-Kv Quasi-Vertical GaN Schottky Barrier Diode with Reverse P-N Junction Termination

0.58 mΩ·cm<sup>2</sup>/523 V GaN Vertical Schottky Barrier Diode with 15.6 kA/cm<sup>2</sup> Surge Current Enabled by Laser Lift-Off/Annealing and N-Ion Implantation

Fluorine-Implanted Termination for Vertical GaN Schottky Rectifier with High Blocking Voltage and Low Forward Voltage Drop

A 1.6 Kv Ga2O3 Schottky Barrier Diode with a Low Reverse Current of 1.2 × 10−5 A/cm2 Enabled by Field Plates and N Ion-Implantation Edge Termination

(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes

Enhancing Key Performance of Vertical GaN Schottky Barrier Diodes Through AlOxInsertion and Dual Ion Co-Implantation

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Electrical Performance and Reliability Analysis of Vertical Gan Schottky Barrier Diodes with Dual-Ion Implanted Edge Termination

Fabrication And Characterization Of Vertical Gan Schottky Barrier Diodes With Boron-Implanted Termination

Comprehensive Design and Numerical Study of GaN Vertical MPS Diodes Towards Alleviated Electric Field Crowding and Efficient Carrier Injection

Gan Schottky Barrier Diodes with High-Resistivity Edge Termination Formed by Boron Implantation

A Study of Reverse Characteristics of GaN-on-Si Quasi-Vertical PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment