Abstract:This study investigates the effect of O2 plasma treatment on the physical and electrical properties of the surface region in Schottky-gate AlGaN/GaN high electron mobility transistor (HEMT). We demonstrate that O2 plasma treatment significantly reduces the gate leakage current and enhances the on/off ratio by three orders of magnitude compared to devices without treatment. The O2 plasma treatment removes organic chemical residue and forms Ga-O bonds on the AlGaN surface beneath the gate metal. X-ray photoelectron spectroscopy (XPS) results indicate that the treatment effectively forms a Ga-O compound oxide layer, which provides surface passivation. Furthermore, atomic force microscope (AFM) analysis reveals a 50% reduction in surface roughness after the O2 plasma treatment. Using O2 plasma oxidation treatment caused a shift in the threshold voltage (VTH) of Schottky-gate AlGaN/GaN HEMT. Initially measured at -5.26 V, the VTH value shifted to +0.5 V. Furthermore, we also employ TCAD simulation to assist in the process developed during the manufacturing process. It is worth noting that the drain current decreases as the Ga-O compound oxide layer increases. This is due to effectively depleted the polarization charges at the AlGaN/GaN interfaces during E-mode operation when reducing the thickness of the AlGaN layer beneath the gate metal. Our results demonstrate the importance of O2 plasma surface treatment in achieving optimal device performance. This study systematically discusses the effect of O2 plasma on AlGaN/GaN surface properties and the formation of Ga-O bonding. It offers insights into developing high-performance Schottky-gate AlGaN/GaN HEMT.

Effect of Oxygen Plasma Treatment on AlGaN Schottky Contacts

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Effect of Oxygen Plasma Treatment on the Performance of Recessed AlGaN/GaN Schottky Barrier Diodes

Improved Schottky Barrier Characteristics for AlInN/GaN Diodes by Oxygen Plasma Treatment

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Effect of Inductively Couple Plasma‐Based Oxygen Plasma Treatment on AlGaN/GaN HEMT

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Influence and Mechanism of Surface Treatment on Ohmic Contacts to AlGaN Surface

Investigation of Ohmic Contact to Plasma-Etched N-Al0.5ga0.5n by Surface Treatment

Fluorine-plasma Surface Treatment for Gate Forward Leakage Current Reduction in AlGaN/GaN HEMTs

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Improved Ohmic Contacts to Plasma Etched High Al Fraction N-Algan by Active Surface Pretreatment

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization

Enhanced Device Performance Of Algan/Gan High Electron Mobility Transistors With Thermal Oxidation Treatment

Normally-off P-Gan/algan/gan High-Electron-mobility Transistors Using Oxygen Plasma Treatment

Effect of Surface Treatment on Electrical Properties of GaN Metal–insulator–semiconductor Devices with Al2O3 Gate Dielectric

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Effective Suppression of Current Collapse in AlGaN/GaN HEMT with N2O Plasma Treatment followed by High Temperature Annealing in N2 Ambience