Abstract:This study investigates the effect of O2 plasma treatment on the physical and electrical properties of the surface region in Schottky-gate AlGaN/GaN high electron mobility transistor (HEMT). We demonstrate that O2 plasma treatment significantly reduces the gate leakage current and enhances the on/off ratio by three orders of magnitude compared to devices without treatment. The O2 plasma treatment removes organic chemical residue and forms Ga-O bonds on the AlGaN surface beneath the gate metal. X-ray photoelectron spectroscopy (XPS) results indicate that the treatment effectively forms a Ga-O compound oxide layer, which provides surface passivation. Furthermore, atomic force microscope (AFM) analysis reveals a 50% reduction in surface roughness after the O2 plasma treatment. Using O2 plasma oxidation treatment caused a shift in the threshold voltage (VTH) of Schottky-gate AlGaN/GaN HEMT. Initially measured at -5.26 V, the VTH value shifted to +0.5 V. Furthermore, we also employ TCAD simulation to assist in the process developed during the manufacturing process. It is worth noting that the drain current decreases as the Ga-O compound oxide layer increases. This is due to effectively depleted the polarization charges at the AlGaN/GaN interfaces during E-mode operation when reducing the thickness of the AlGaN layer beneath the gate metal. Our results demonstrate the importance of O2 plasma surface treatment in achieving optimal device performance. This study systematically discusses the effect of O2 plasma on AlGaN/GaN surface properties and the formation of Ga-O bonding. It offers insights into developing high-performance Schottky-gate AlGaN/GaN HEMT.

Effective Suppression of Current Collapse in AlGaN/GaN HEMT with N2O Plasma Treatment followed by High Temperature Annealing in N2 Ambience

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NH3/N2 plasma treatment on etched AlGaN surface for high-performance p-GaN HEMTs fabrication

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Reduction of Current Collapse in GaN High-Electron Mobility Transistors Using a Repeated Ozone Oxidation and Wet Surface Treatment

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Investigating the effect of O2 plasma treatment on the operational characteristics of schottky-gate AlGaN/GaN HEMT

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

Enhanced Performance of Low-Leakage-Current Normally off P-Gan Gate HEMTs Using NH3 Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Improved Vth Stability and Gate Reliability of GaN-Based MIS-HEMTs by Employing Alternating O2 Plasma Treatment

Effects of Polycrystalline AlN Film on the Dynamic Performance of AlGaN/GaN High Electron Mobility Transistors

O2 Plasma Alternately Treated ALD-Al2O3 As Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Current collapse suppression in AlGaInN/GaN HEMTs with thin unintentionally doped GaN channel and AlN back barrier grown on single-crystal AlN substrate

Enhanced Device Performance Of Algan/Gan High Electron Mobility Transistors With Thermal Oxidation Treatment

Ohmic Contact to AlGaN/GaN HEMT with Electrodes in Contact with Heterostructure Interface

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts