Abstract:Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.

Low Surface Damage During Ohmic Contact Formation in AlGaN/GaN HEMT by Selective Laser Annealing

Protection of Isolated and Active Regions in AlGaN/GaN HEMTs Using Selective Laser Annealing*

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing

Mechanism of Ti/Al/Ni/Au Ohmic Contacts to AlGaN/GaN Heterostructures Via Laser Annealing

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Optimization of Contact Resistance and DC Characteristics for AlGaN/GaN HEMTs Utilizing Sub-10 nm Nanohole Etching

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication

Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT

Formation of Low‐resistance and Thermally Stable Ohmic Contacts to Laser Lift‐off Prepared N‐polar N‐gan

Effective Suppression of Current Collapse in AlGaN/GaN HEMT with N2O Plasma Treatment followed by High Temperature Annealing in N2 Ambience

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Improved Ohmic-contact to AlGaN/GaN Using Ohmic Region Recesses by Self-Terminating Thermal Oxidation Assisted Wet Etching Technique

Low-Resistive Ohmic Contacts in High-Electron-Mobility AIN/GaN Heterostructures by Suppressing the Oxygen Incorporation

Effects of 532 nm laser-assisted annealing on metal contact to p-GaN

Investigation of MBE grown high Al concentration AlGaN ohmic contact

Mechanism of Ohmic Contact Formation in AlGaN/GaN High Electron Mobility Transistors Using Microwave Annealing

Algan/Gan Hemts with an Insulated Gate Fabricated by Inductively Coupled Plasma Oxidization