Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Jiarui Gong,Xin Su,Shuoyang Qiu,Jie Zhou,Yang Liu,Yiran Li,Donghyeok Kim,Tsung-Han Tsai,Tien Khee Ng,Boon S. Ooi,Zhenqiang Ma

DOI: https://doi.org/10.1063/5.0188768

IF: 2.877

2024-03-19

Journal of Applied Physics

Abstract:The recently demonstrated semiconductor grafting approach allows one to create an abrupt, low interface-trap-density heterojunction between a high-quality p-type single-crystalline semiconductor (non-nitrides) with n-type GaN. However, due to the surface band-bending from GaN polarization, an energy barrier exists at the grafted heterojunction, which can impact the vertical charge carrier transport. Reducing the energy barrier height is essential for some advanced device development. In this work, we employed UV/O3 and O2 plasma to treat a Ga-polar GaN surface with/without an ultrathin (∼2 nm) ALD-Al2O3 coating and studied the effects of the treatments on surface band-bending. Through XPS measurements, it was found that the treatments can suppress the upward band-bending of the Ga-polar GaN by 0.11–0.39 eV. The XPS results also showed that UV/O3 treatment is an effective surface cleaning method with little surface modification, while O2 plasma causes a strong oxidation process that occurs inside the top layer GaN.

physics, applied

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to adjust and control the surface band bending of gallium nitride (GaN) materials through different surface treatment methods. Specifically, the effects of ultraviolet/ozone (UV/O₃) treatment and oxygen plasma (O₂ plasma) treatment on the surface band bending of gallium - polar GaN were studied, especially how these treatment methods affect the surface band structure and their effectiveness in reducing the surface defect density. In addition, the paper also explored the effect of combining the above - mentioned surface treatment techniques after depositing an ultrathin (about 2 nm) atomic - layer - deposited aluminum oxide (ALD - Al₂O₃) coating on the GaN surface. Through these studies, the author hopes to find effective methods to optimize the performance of GaN - based devices, especially in reducing the height of the energy barrier, which is crucial for the development of certain advanced devices.

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