Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

Impact of Post-Deposition Annealing on the Electronic Properties of Al2O3/GaN Interface by First-Principles Study

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Evolution Of Traps In Tin/O-3-Sourced Al2o3/Gan Gate Structures With Thermal Annealing Temperature

Impact of Postdeposition Annealing Ambient on the Mobility of Ge Nmosfets with 1-Nm EOT Al2O3/GeOx/Ge Gate-Stacks

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing

Reliability Improvement of Ge Pmosfets with Al2O3 Dielectric by Ozone Post Annealing

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

PEALD Induced Interface Engineering of AlNO/AlGaN/GaN MIS Diode with Alternate Insertion of AlN in Al2O3

Effects of ammonia and oxygen plasma treatment on interface traps in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Effects of UV/O3 and O2 plasma surface treatments on the band-bending of ultrathin ALD-Al2O3 coated Ga-polar GaN

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Impact of Post-Nitridation Annealing on Ultra-Thin Gate Oxide Performance

Effect of Surface Treatment on Electrical Properties of GaN Metal–insulator–semiconductor Devices with Al2O3 Gate Dielectric

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

The Effect of Long-Duration High-Temperature Annealing in an Air Ambient on the Properties of AlGaN∕GaN Heterostructures