Abstract:Normally off AlGaN/GaN high electron mobility transistors with a p-type gate are promising for power switching applications, with advantages of low energy consumption and safe operation. In this work, p-NiO is employed as a gate stack, and the interfacial reconstruction and band structure modification at the p-NiO/AlGaN interface have been demonstrated to manipulate channel transport of AlGaN/GaN high electron mobility transistors by post-annealing. In addition to achieving a positive threshold voltage of 0.6 V and a large saturation output current of 520 mA/mm, we found that the gate leakage and On/Off drain current ratio can be improved significantly by more than 104 due to the p-NiO/AlGaN interfacial reconstruction. However, high annealing temperature also results in an increasing ON-resistance and a dramatically increased knee voltage (VK), which can be attributed to the formation of an ultra-thin γ-Al2O3 layer and the substitution of O on N site as a shallow donor at the p-NiO/AlGaN interface confirmed by experimental analyses. Theoretical calculations indicate that such interface reconstruction facilitates an additional potential well at the p-NiO/AlGaN interface to which electrons are spilled out from a two-dimensional electron gas channel under high forward gate voltage, resulting in the increased VK. Finally, an optimized annealing condition was confirmed that can eliminate this increased VK phenomenon and simultaneously remain these significantly improved device performances. These findings provide deep understanding of the performance manipulation of AlGaN high electron mobility transistors, which is very important for engineering the p-NiO/AlGaN interface toward high-performance and stable devices.

NiO/AlGaN interface reconstruction and transport manipulation of p-NiO gated AlGaN/GaN HEMTs

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Current Transport Dynamics and Stability Characteristics of the NiO X Based Gate Structure for Normally-off GaN HEMTs

Investigation of Electrical Property and Thermal Stability in Enhancement-Mode InxAl1–xN/AlN/GaN MOS-HEMTs Fabricated by Using NiOx Gate and Fluorine Treatment

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Over 1200 V Normally-OFF P-Nio Gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

Improved Electrical Performance of InAlN/GaN High Electron Mobility Transistors with Forming Gas Annealing

Interface charge engineering on an in situ SiN x /AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator

High- ${k}$ HfO 2 -Based AlGaN/GaN MIS-HEMTs with Y 2 O 3 Interfacial Layer for High Gate Controllability and Interface Quality

High Breakdown AlGaN/GaN MOSHEMT with Thermal Oxidized Ni/Ti As Gate Insulator

High V th and Improved Gate Reliability in P-GaN Gate HEMTs with Oxidation Interlayer

Simulation and analysis of enhancement-mode AlGaN/GaN HEMT with P-I-N junction gate

High-performance normally off p-GaN gate high-electron-mobility transistor with In 0.17 Al 0.83 N barrier layer design

Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact with Laser Annealing

Improving Performance of Al2O3/AlN/GaN MOSC-HEMTs Via Microwave Annealing

Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Threshold Voltage Modulation Engineering Using P‐type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Comparative Study of Characteristics and Interface States with and Without Post‐Gate‐Annealing Treatment for AlGaN/GaN‐Recessed Metal–Insulator–Semiconductor High Electron Mobility Transistors Using HfO2 Gate Insulator on Si Substrates