Abstract:In this paper, Ni/Au/Ge/Ni/Au laminated metals were deposited on the n-(Al0.27Ga0.73)(0.5)In0.5P by electron beam evaporation, the ohmic contact with low contact resistance was successfully prepared by optimized annealing process. The specific contact resistance reached 1.4 x 10(-4) Omega.cm(2) when annealed at 445 degrees C for 600 s. The result of the secondary ion mass spectrometer shows that the solid-state reaction takes place at the interface between the laminated metal Ni/Au/Ge/Ni/Au and n-AlGaInP, then the germanium atoms and indium atoms diffuse outwards due to thermal decomposition and leave vacancies in the lattice. In this paper, the reason for the formation of ohmic contact is attributed to the fact that the germanium vacancy and indium vacancy are occupied by gallium atoms as donors to increasing the N-type doping concentration. The optimized annealing process can improve the ohmic contact performance of n-(Al0.27Ga0.73)(0.5)In0.5P with low doping concentration, but the specific contact resistivity has no obvious relationship with the annealing process when the of doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P increased. The Schottky barrier is high at low doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P. So inter diffusion in the annealing process could significantly increase the doping concentration of n-(Al0.27Ga0.73)(0.5)In0.5P and reduce the Schottky barrier height. Nevertheless, the Schottky barrier of the sample with high doping concentration is low enough what is not sensitive with inter diffusion. It provides a new method for the preparation of N-electrode of AlGaInP thin film light-emitting-diodes chip, as so as avoid the problem of n(+)-GaAs absorption in the conventional N-electrode preparation method and the problem of electrode dropping. However, there are still some shortcomings in this paper. The disadvantage is that the high doping concentration of n-AlGaInP will affect the crystal quality, which will reduce the luminous efficiency of LED. Therefore, in order to prepare ohmic contact with excellent properties on n-AlGaInP with lower doping concentration, optimizing the electrode design and the surface treatment of semiconductor materials are the keys to follow-up research.

Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In 0.18 Al 0.82 N/GaN heterostructures

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Thermal annealing behaviour of Al/Ni/Au multilayer on n-GaN Schottky contacts

The Leakage Current Mechanisms in the Schottky Diode with a Thin Al Layer Insertion Between Al 0.245 Ga 0.755 N/GaN Heterostructure and Ni/Au Schottky Contact

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures

Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Reducing the reverse leakage current of AlGaN/GaN heterostructures via low-fluence neutron irradiation

Effects of Fluorine-Based Plasma Treatment and Thermal Annealing on High-Al Content Algan Schottky Contact

Oxidation Treatment on Ni/Au Ohmic Contacts to P‐type GaN

Thermal Stability of Tungsten and Tungsten Nitride Schottky Contacts to AlGaN/GaN

Temperature Dependence of the Specific Resistance in Ti/Al/Ni/Au Ohmic Contacts on (nh4)2sx Treated N-Type GaN

Reduction of Junction Leakage Current in Sub-10 Nm Ultra-Shallow NiGe/n-Ge Schottky Junctions by Dopant Segregation

Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Current Transport Mechanisms in Pt/Au Schottky Contacts to AlInGaN Using AlGaN/InGaN Short-Period Superlattices

The Annealing Effect Of Schottky Contact On Algan/Gan

Influence Of Indium-Tin-Oxide Thin-Film Quality On Reverse Leakage Current Of Indium-Tin-Oxide/N-Gan Schottky Contacts