Abstract:The Pt/Au Schottky contacts to InGaN samples with different background carrier concentrations are fabricated. The crystal qualities of InGaN samples are characterized by X-ray diffraction (XRD) and atomic force microscope (AFM), and the correlation between threading dislocation density of InGaN and growth temperature is further clarified. The full width at half maximum (FWHM) values of the InGaN (0002) XRD rocking curves show that the density of threading dislocations in InGaN, which can seriously deteriorate InGaN crystal quality and surface morphology, decreases rapidly with increasing growth temperature. The Hall measurements show that the background carrier concentration of InGaN increases by two orders of magnitude as growth temperature decreases from 750 to 700℃, which is due to a reduced ammonia decomposition efficiency leading to the presence of high-density donor-type nitrogen vacancy (VN) defects at lower temperature. Therefore, combining the studies of XRD, AFM and Hall, it can be concluded that the higher growth temperature is favorable for realizing the InGaN film with low density of VN defects and threading dislocations for fabricating high-quality Schottky contacts, and then the barrier characteristics and current transport mechanism of Pt/Au/n-InGaN Schottky contact are investigated by current-voltage measurements and theory analysis based on the thermionic emission (TE) model and thermionic field emission (TFE) model. The results show that Schottky characteristics for InGaN with different carrier concentrations manifest obvious differences. It is noted that the high carrier concentration leads to the Schottky barrier height and the ideality factor obtained by TE model are quite different from that by TFE model due to the presence of high density of VN defects. This discrepancy suggests that the VN defects lead to the formation of the tunneling current and further reduced Schottky barrier height. Consequently, the presence of tunneling current results in the increasing of total transport current, which means that the defects-assisted tunneling transport and TE constitute the current transport mechanism in the Schottky. However, the fitted results obtained by TE and TFE models are almost identical for the InGaN with lower carrier concentration, indicating that TE is the dominant current transport mechanism. The above studies prove that the Pt/Au/n-InGaN Schottky contact fabricated using low background carrier concentration shows better Schottky characteristics. Thus, the properly designed growth parameters can effectively suppress defects-assisted tunneling transport, which is crucial to fabricating high-quality Schottky devices.

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Hot electron induced non-saturation current behavior at high electric field in InAlN/GaN heterostructures with ultrathin barrier

The Leakage Current of the Schottky Contact on the Mesa Edge of AlGaN/GaN Heterostructure

Analysis and modeling of the influence of gate leakage current on threshold voltage and subthreshold swing in p-GaN gate AlGaN/GaN high electron mobility transistors

Gate Current Transport in Enhancement-Mode P-N Junction/AlGaN/GaN (PNJ) HEMT

Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In 0.18 Al 0.82 N/GaN heterostructures

Magnetotransport Properties of Lattice-Matched In0.18al0.82n/Aln/Gan Heterostructures

Current Transport Mechanism of Schottky Contact of Pt/Au/n-InGaN

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers

Current Transport Mechanisms in Pt/Au Schottky Contacts to AlInGaN Using AlGaN/InGaN Short-Period Superlattices

Surface Acceptor-Like Trap Model for Gate Leakage Current Degradation in Lattice-Matched Inaln/Gan Hemts

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Investigations of leakage current properties in semi-insulating GaN grown on Si(1 1 1) substrate with low-temperature AlN interlayers

Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surrounded by the Gate Channel

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

The Leakage Current Mechanisms in the Schottky Diode with A Thin Al Layer Insertion Between Al0.245ga0.755n/Gan Heterostructure and Ni/Au Schottky Contact