Abstract:In this paper, we present a systematic investigation of metal–organic chemical vapor deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN metal insulator semiconductor high electron mobility transistors (MISHEMTs). The dielectric constant and breakdown field of the in situ SiN were extracted from devices with varied gate dielectric thicknesses. Using frequency-dependent capacitance–voltage and parallel conductance methods, we obtained a low trap density of $\sim 3\times 10^{12}$ cm $^{-2}$ eV $^{-1}$ at the SiN/AlGaN interface. The MISHEMTs with a source–drain distance of $3~\mu \text{m}$ show a maximum drain current of 1560 mA/mm and a high on/off current ratio of $10^{9}$ . The device threshold voltage ( ${V}_\textsf {th}$ ) stability was assessed by means of both negative and positive gate stress measurements, as well as temperature-dependent $ {I}_\textsf {D}$ – ${V}_\textsf{G}$ measurements. We observed a minimal $ {V}_\textsf{th}$ shift of ~0.4 V under both 3000 s gate stress of ${V}_\textsf {GS}= 4$ V and up to 200 °C thermal stimulation. Furthermore, combining the in situ SiN with plasma-enhanced chemical vapor deposition SiN, we developed a bilayer passivation scheme for effective suppression of current collapse. Employing the high-quality in situ SiN, we have demonstrated large-area GaN MISHEMTs on Si with a gate width of 20 mm, showing a low off-state leakage of $2~\mu \text{A}$ /mm at 600 V and a low dynamic/static ON-resistance ratio. The device results show great advantages of employing in situ SiN in D-mode GaN MISHEMTs for high-efficiency power switching applications.

Leakage Current Reduction in Planar AlGaN/GaN MISHEMT with Drain Surrounded by the Gate Channel

Performance of an AlGaN/GaN MISHEMT with Sodium Beta-Alumina for Gate Insulation and Surface Passivation

Current-collapse Suppression and Leakage-Current Decrease in AlGaN/GaN HEMT by Sputter-Tan Gate-Dielectric Layer

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

Reverse-blocking AlGaN/GaN Normally-off MIS-HEMT with Double-Recessed Gated Schottky Drain

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

A new gate design combined MIS and p-GaN gate structures for normally-off and high on-current operation

Improved Drain Current Density of E-Mode AlGaN/GaN HEMT with Double-Doped P-Gate

Mechanism of Leakage of Ion-Implantation Isolated AlGaN/GaN MIS-high Electron Mobility Transistors on Si Substrate

Investigation of high threshold voltage E-mode AlGaN/GaN MIS-HEMT with triple barrier layer

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx As a Gate Dielectric

823-Ma/mm Drain Current Density and 945-Mw/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs with a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

AlGaN/GaN MISHEMTs with AlN Gate Dielectric Grown by Thermal ALD Technique

AlGaN/GaN MISHEMTs with Sodium-Beta-Alumina As the Gate Dielectrics

Investigation of contact mechanism and gate electrostatic control in multi-channel AlGaN/GaN high electron mobility transistors with deep recessed ohmic contact

Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage

Improved Current Collapse in Recessed AlGaN/GaN MOS-HEMTs by Interface and Structure Engineering

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Performance Optimization of Lateral Algan/Gan Hemts with Cap Gate on 150-Mm Silicon Substrate