Abstract:Abstract This article reports the effect of gamma ( γ )-ray irradiation on barrier inhomogeneities that leads towards improvement in diode parameters in Ni-AlGaN/GaN Schottky diodes. The Schottky diodes were subjected to a cumulative γ -ray dose up to 15 kGy and their current–voltage ( I – V ) and capacitance–voltage ( C – V ) characteristics were measured simultaneously at different temperatures during the pristine stage and after each radiation dose. The Schottky barrier height ( Φ b ) had an increase of 10% to 20% in the temperature range greater than 250 K. Whereas, the change in the ideality factor ( η ) was found to be prevalent at lower temperatures (<250 K). More linearity in the behavior of η variation with temperature was found post γ -irradiation showing an improvement in homogeneity of the metal/semiconductor interface. Post γ -ray exposure, barrier inhomogeneities at the metal/semiconductor interface were found to reduce due to annealing effects that also led towards an increase in the contribution of thermionic emission current flow. Further, a decrease of 16% in the standard deviation of the Gaussian distribution of Φ b around the mean Φ b was obtained. A decrease in contact resistance ( R C ) was deduced using a circular transmission line method, which was also due to the partial annealing effect of γ -ray radiation. Finally, the channel carrier concentration ( n s ), extracted using C – V analysis, was found to remain unaltered.

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