Abstract:This study investigated the impact of the post-deposition annealing (PDA) process on the material and electrical properties of copper oxide (Cu 2 O) and nickel oxide (NiO) thin films deposited on a silicon carbide (SiC) substrate. Through radiofrequency (RF) sputtering, these films were subjected to PDA in a nitrogen (N 2 ) and oxygen (O 2 ) gas environment. Remarkably, the Cu 2 O films resisted phase transition following the N 2 PDA process but exhibited a transition to cupric oxide (CuO) after undergoing the O 2 PDA process. The symmetry of Cu 2p in the as-deposited Cu 2 O film was excellent; however, the phase-transformed CuO films exhibited an increase in binding energy and the emergence of satellite peaks. The Ni 2p exhibited various defects, such as nickel vacancies (V Ni ) and interstitial oxygen (O i ), in response to the different PDA atmospheres. The rectification ratios of the N 2 -annealed Cu 2 O and NiO devices were determined as 1.50 × 10 7 and 4.01 × 10 6 , respectively, signifying a substantial enhancement by a factor of approximately 789 for the Cu 2 O/SiC device and 124 for the NiO/SiC device relative to their non-annealed counterparts. The findings of this study indicate that meticulous control of deposition for potential p -type materials such as Cu 2 O and NiO can significantly improve the performance in applications involving high-throughput and low-cost electronics. Graphical

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Reduced On-Resistance and Improved 4H-SiC Junction Barrier Schottky Diodes Performance by Laser Annealing on C-Face Ohmic Regions in Thin Structures

Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich $\Hbox{al}_{2}\hbox{o}_{3}/p\hbox{-Si}$ Diodes

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Gamma Irradiation and Annealing Effects on 4H-Sic Schottky Barrier Diode

Effect of annealing temperature on the physical properties of NiO thin films and ITO/NiO/Al Schottky diodes

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Barrier Enhancement Effect of Postannealing in Oxygen Ambient on Ni/AlGaN Schottky Contacts

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes

Fabrication and investigation of AlGaN-based Schottky barrier diode

Fabrication of Al/n-GaN/p-Si/Al diodes by thermal evaporation and evaluation of effect of gamma irradiation on device properties

Effect of Rapid Thermal Annealing on Performances of Vertical Boron-Doped Diamond Schottky Diode with LaB6 Interlayer

Effects of Etching Temperature on the Characteristics of Recessed-Anode AlGaN/GaN Schottky Barrier Diodes

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding

The optimized interface characteristics of β -Ga 2 O 3 Schottky barrier diode with low temperature annealing

Effect of high temperature annealing (T > 1650°C) on the morphological and electrical properties of p-type implanted 4H-SiC layers