Abstract:Gallium oxide (Ga2O3) has attracted much attention because of its notable advantages, including its low cost and a high critical breakdown field. In this study, atomic layer deposition was used to deposit high-quality Ga2O3 onto a SiC substrate with high thermal conductivity. The band arrangement of the Ga2O3/SiC heterojunction was investigated by modulating oxygen vacancies using different post-annealing atmospheres. The results demonstrated that recrystallization of Ga2O3 resulted in a good crystalline state because of the rearrangement of Ga and O atoms following high-temperature annealing. Simultaneously, the roughness of all annealed samples increased. X-ray photoelectron spectroscopy analysis revealed a significant reduction of oxygen vacancy content in samples that were annealed in an oxygen atmosphere; this is attributed to the replacement of oxygen vacancies by oxygen atoms. Conversely, oxygen vacancies increased in an oxygen-free environment. The band offsets (valence band, conduction band) were respectively determined to be (−1.03 eV, 0.5 eV), (−0.63 eV, 0.9 eV), (−1.39 eV, 0.16 eV), and (−1.32 eV, 0.22 eV) for the as-deposited sample and annealed samples with O2, N2, and Ar atmospheres. Finally, the impact that various ratios of oxygen vacancies have on the energy band structure of Ga2O3 was studied using first-principles calculations. Calculations on heterojunctions confirmed that the introduction of oxygen vacancies reduced the potential barrier at the interface and promoted the movement of electrons. Thus, this study provides valuable insights for the design and application of Ga2O3/SiC heterojunction devices.

Influence of Annealing Atmosphere on the Characteristics of Ga2O3/4H-SiC n-n Heterojunction Diodes

Impact of an Annealing Atmosphere on Band-Alignment of a Plasma-Enhanced Atomic Layer Deposition-Grown Ga2O3/SiC Heterojunction

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of post-deposition annealing on temperature-dependent electrical characteristics of Ni/(Al0.1Ga0.9)2O3/4H-SiC Schottky barrier diodes

Fabrication and Characterization of Oxygenated AlN/4H-SiC Heterojunction Diodes

Influence of Annealing Atmosphere on the Structure, Morphology and Transmittance of N-Incorporated Ga2o3 Films

Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC

Analysis of deep level defects in nitrogen post-deposition annealed Ga2O3/SiC hetero-structured Schottky diodes grown by mist-CVD

Thermal Annealing Effect on Mg-doped InGaN/GaN Heterostructures in O2 Ambient

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Impact of Post-Deposition Annealing on Electrical Properties of RF-Sputtered Cu2O/4H-SiC and NiO/4H-SiC PiN Diodes

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

The role of surface pretreatment by low temperature O 2 gas annealing for β -Ga 2 O 3 Schottky barrier diodes

Annealing temperature controlled crystallization mechanism and properties of gallium oxide film in forming gas atmosphere

Comparison of electrical characteristics of aerosol-deposited Ga2O3/4H-SiC heterojunctions as a function of thickness

Effects of implementing dual-step nitrogen ambient for growth and post-deposition annealing of Ga2O3 films sputtered on silicon

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC