Abstract:The present research explores the fabrication of a metal insulator semiconductor Schottky barrier diode (SBD) with rare earth metal oxide (Yb2O3) thin films as insulators that are effectively developed on a large scale using the low-cost jet nebulizer spray pyrolysis technique (JNSP). The Yb2O3 thin films are deposited at various substrate temperatures (350 °C–550 °C) to ascertain its influence on the characteristic properties of the material. The structural, morphological and opto-electrical properties are investigated using various characterization techniques. Here, X-ray diffraction (XRD) analysis revealed the single crystalline cubic crystal structure of Yb2O3 thin films. Field emission scanning electron microscope (FESEM) images show the presence of uniformly distributed cage and globular like structures spread over the entire surface of the Yb2O3 films. The elemental composition study demonstrates the presence of Yb and O. The optical direct energy band gap of Yb2O3 thin films have been analyzed through UV-Visible spectra. Current – voltage measurements were analyzed in dark and light conditions for the Al/Yb2O3/p-Si structured Schottky barrier diodes (SBDs) which are fabricated with interfacial layers at different substrate temperatures. Further, the functionality of the SBDs was tested at different temperatures ranging from 30 °C to 150 °C. The experimental results of all SBDs indicate a linear reduction in the ideality factor (n) up to 2.537 and 2.059 with a slight increase in the effective barrier height (ФB) of 0.789 eV& 0.638 in dark and light conditions, respectively. The SBD fabricated at 550 °C recorded good performance, which will be suitable for thermal dependent electronic device applications.

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