Abstract:This article presents prime results on process development and optimization of dry etching of silicon carbide (SiC) for via formation and deep etching for SiC-based microsystems. The investigations and corresponding results of the process developments enable the first realization of a full SiC-based technological demonstrator composed of a SiC-interposer with a flip chip mounted deep etched micro electromechanical system (MEMS) SiC Device. By optimizing the process, etch depth of 200 $mu ext{m}$ with an etch rate of up to 2 $mu ext{m}$ /min can be achieved for via etching. In addition, a design of experiments (DoEs) with a total of 29 experiments with seven factors was done to characterize the deep etching of large areas into the SiC. Hereby, vertical sidewalls with low micromasking, low microtrenching and an etch rate of up to 4 $mu ext{m}$ /min could be achieved. The findings and optimized processes were implemented to develop on the one hand a 200-$mu ext{m}$ -thick SiC interposer with copper metallization. On the other hand, a SiC-MEMS Device was manufactured with a deep etched cavity in SiC bulk wafer forming by the end a 50-$mu ext{m}$ thin membrane. The results demonstrate the ability of etching monocrystalline SiC with a high etch rate, enabling new fundamental topologies/structures and packaging concepts for harsh environments MEMSs and high-power electronics. The developed etching technologies demonstrate and enable various applications for 3-D Integration with wide bandgap substrates taking advantage of the superior electrical and mechanical properties of SiC.

Ultradeep, low-damage dry etching of SiC

Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage

Producing Silicon Carbide Micro and Nanostructures by Plasma‐Free Metal‐Assisted Chemical Etching

Impact of High-k Dielectrics on Breakdown Performances of SiC and Diamond Schottky Diodes

Micro-trench free 4H-SiC etching with improved SiC/SiO2 selectivity using inductively coupled SF6/O2/Ar plasma

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Demonstration of Irradiation-Resistant 4H-Sic Based Photoelectrochemical Water Splitting

Comparing the effect between room temperature and low temperature heavy ion irradiation by deep level transient spectroscopy

Investigation and Modeling of Etching Through Silicon Carbide Vias (TSiCV) for SiC Interposer and Deep SiC Etching for Harsh Environment MEMS by DoE

2.5-kV AlGaN/GaN Schottky Barrier Diode on Silicon Substrate with Recessed-anode Structure

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Unveiling microstructural damage for leakage current degradation in SiC Schottky diode after heavy ions irradiation under 200 V

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

2.7-Kv Algan/Gan Schottky Barrier Diode On Silicon Substrate With Recessed-Anode Structure

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

The evolution of defects in n-type 4H-SiC Schottky barrier diode irradiated with swift heavy ion using the Deep Level Transient Spectroscopy

Microscale pattern etch of 4H–SiC by inductively coupled plasma

Effect of Dielectric Barrier Discharge on Semiconductor Si Electrode Surface

Electrochemical etching strategy for shaping monolithic 3D structures from 4H-SiC wafers

Investigation of Barrier Inhomogeneities and Electronic Transport on Al-Foil/p-Type-4H-SiC Schottky Barrier Diodes Using Diffusion Welding