Abstract:Electronic polarization, manifested in numerous physical phenomena such as ferroelectricity, piezoelectricity, and pyroelectricity, is of great importance to many technological applications. The presence of ferroelectricity in bulk elemental materials is extremely rare due to the high symmetry of the underlying lattices. However, the presence of a surface lowers the symmetry, which may provide a future avenue for achieving robust ferroelectric polarization. Using first-principles calculations, we show that a spontaneous electrical polarization can be realized on the silicon reconstructed (001) surface. The magnitude of this polarization is $0.45\ifmmode\times\else\texttimes\fi{}{10}^{\ensuremath{-}10}\phantom{\rule{0.16em}{0ex}}\mathrm{C}/\mathrm{m}$, comparable to those in benchmarking two-dimensional ferroelectric compounds such as SnTe and SnSe. The symmetry lowering is originated from a Peierls instability that removes the degeneracy of surface dangling bonds, whereby opening a band gap. Although flip-flop of the surface dimers may destroy the ordered phase at elevated temperatures, we find that a modest compressive strain, which increases the local stress and interdimer coupling, can drastically increase the robustness of the ferroelectric state towards room-temperature operations. The technology for processing Si has been well developed and the Si (001) surface has also been widely used in various electronic devices. Our discovery here thus holds high promise in a multitude of fields, ranging from nanoscale random access memory to low power consumption energy storage devices.

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity

Macroscopic flexotronics enhanced controllable piezotronic-like response by flexual semiconductor devices

Effect of Flexoelectricity on a Bilayer Molybdenum Disulfide Schottky Contact

Flexoelectronics of Centrosymmetric Semiconductors

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

Silicon flexoelectronic transistors

Fabrication and Modeling of Schottky Diode Integrated in Standard CMOS Process

Design and Fabrication of Schottky Diode with Standard CMOS Process

Spontaneous Symmetry Lowering of Si (001) Towards Two-Dimensional Ferro/antiferroelectric Behavior

Bending of PN junctions in flexoelectric semiconductors

Effect of flexoelectricity on piezotronic responses of a piezoelectric semiconductor bilayer

Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition

Direct Barrier Evaluation Method for SiC Devices with Junction Barrier Schottky Structures Demonstrated with Quasi-Continuous Spacing Variation

A Comparative Study of SiC MOSFETs with and Without Integrated SBD

1.2-kV Low-Barrier 4H-SiC JBS Diodes by Virtue of P-Implants Across Dead Field of Current Flow

Manipulation of bilayer MoS 2 -based MESFET with flexoelectric polarization field

Flexoelectronic doping of the degenerate silicon and the correlated electron behavior

Commercialization of Highly Rugged 4H-Sic 3300 V Schottky Diodes and Power MOSFETs

Manipulation of Bilayer Mos2-Based Mesfet with Flexoelectric Polarization Field

High Temperature Performance of 6500V 4H-Sic MOSFET with Embedded Schottky Barrier Diode

A Novel SiC MOSFET Embedding Low Barrier Diode With Enhanced Third Quadrant and Switching Performance