Abstract:Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the permanent band gap of MoS2 for digital applications. Herein, we investigate the electron transfer, photoluminescence, and gate-controlled carrier transport in such a heterostructure. We show that the junction is a Schottky barrier, whose height can be artificially controlled by gating or doping graphene. When the applied gate voltage (or the doping level) is zero, the photoexcited electron-hole pairs in monolayer MoS2 can be split by the heterojunction, significantly reducing the photoluminescence. By applying negative gate voltage (or p-doping) in graphene, the interlayer impedance formed between MoS2 and graphene exhibits an 100-fold increase. For the first time, we show that the gate-controlled interlayer Schottky impedance can be utilized to modulate carrier transport in graphene, significantly depleting the hole transport, but preserving the electron transport. Accordingly, we demonstrate a new type of FET device, which enables a controllable transition from NMOS digital to bipolar characteristics. In the NMOS digital regime, we report a very high room temperature on/off current ratio (ION/IOFF ∼ 36) in comparison to graphene-based FET devices without sacrificing the field-effect electron mobilities in graphene. By engineering the source/drain contact area, we further estimate that a higher value of ION/IOFF up to 100 can be obtained in the device architecture considered. The device architecture presented here may enable semiconducting behavior in graphene for digital and analogue electronics.

Manipulation of Bilayer Mos2-Based Mesfet with Flexoelectric Polarization Field

Manipulation of bilayer MoS 2 -based MESFET with flexoelectric polarization field

Effect of Flexoelectricity on a Bilayer Molybdenum Disulfide Schottky Contact

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Mechanical Modulation of 2D Electronic Devices at Atto‐Joule Energy via Flexotronic Effect

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Controlled Growth of Bilayer-MoS2 Films and MoS2-Based Field-Effect Transistor (FET) Performance Optimization

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

P-type polar transition of chemically doped multilayer MoS2 transistor

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Tuning On-Off Current Ratio and Field-Effect Mobility in A Mos2-Graphene Heterostructure Via Schottky Barrier Modulation

Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.

Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)