Abstract:Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Piezoresistivity and Strain-induced Band Gap Tuning in Atomically Thin MoS2

Strain-Enhanced Mobility of Monolayer MoS2

Strain-engineering the Schottky barrier and electrical transport on MoS2

Electronic transport modulation on few-layers suspended MoS$_2$ under strain

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Static and Dynamic Piezopotential Modulation in Piezo-Electret Gated MoS 2 Field-Effect Transistor.

Piezoelectricity-modulated Optical Recombination Dynamics of Monolayer-Mos2/gan-film Heterostructures

Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs

Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics.

Mobility Enhancement of Strained MoS 2 Transistor on Flat Substrate

Improving the Strain Control Performance of MoS2 Monolayer to Develop Flexible Electronics

Biaxial Tensile Strain Enhances Electron Mobility of Monolayer Transition Metal Dichalcogenides

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Biaxial Strain Transfer in Monolayer MoS2 and WSe2 Transistor Structures

Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate

Tuning Optical Signatures of Single- and Few-Layer MoS2 by Blown-Bubble Bulge Straining Up to Fracture.

Approaching strain limit of two-dimensional MoS2 via chalcogenide substitution