Abstract:Molybdenum disulfide (MoS 2 ) is a representative two-dimensional layered transition-metal dichalcogenide semiconductor. Layer-number-dependent electronic properties are attractive in the development of nanomaterial-based electronics for a wide range of applications including sensors, switches, and amplifiers. MoS 2 field-effect transistors (FETs) have been studied as promising future nanoelectronic devices with desirable features of atomic-level thickness and high electrical properties. When a naturally n-doped MoS 2 is contacted with metals, a strong Fermi-level pinning effect adjusts a Schottky barrier and influences its electronic characteristics significantly. In this study, we investigate multilayer MoS 2 Schottky barrier FETs (SBFETs), emphasizing the metal-contact impact on device performance via computational device modeling. We find that p-type MoS2 SBFETs may be built with appropriate metals and gate voltage control. Furthermore, we propose ambipolar multilayer MoS2 SBFETs with asymmetric metal electrodes, which exhibit gate-voltage dependent ambipolar transport behavior through optimizing metal contacts in MoS2 device. Introducing a dual-split gate geometry, the MoS 2 SBFETs can further operate in four distinct configurations: p − p, n − n, p − n, and n − p. Electrical characteristics are calculated, and improved performance of a high rectification ratio can be feasible as an attractive feature for efficient electrical and photonic devices.

Manipulation of bilayer MoS 2 -based MESFET with flexoelectric polarization field

Manipulation of Bilayer Mos2-Based Mesfet with Flexoelectric Polarization Field

Effect of Flexoelectricity on a Bilayer Molybdenum Disulfide Schottky Contact

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Mechanical Modulation of 2D Electronic Devices at Atto‐Joule Energy via Flexotronic Effect

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

Electrically Controlled High Sensitivity Strain Modulation in MoS2 Field-Effect Transistors via a Piezoelectric Thin Film on Silicon Substrates

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions

Gate-tunable Linear Magnetoresistance in Molybdenum Disulfide Field-Effect Transistors with Graphene Insertion Layer

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Boltzmann Switching MoS2 Metal–Semiconductor Field‐Effect Transistors Enabled by Monolithic‐Oxide‐Gapped Metal Gates at the Schottky–Mott Limit (Adv. Mater. 29/2024)

Molecular Approach to Electrochemically Switchable Monolayer MoS2 Transistors

MoS2transistors gated by ferroelectric HfZrO2with MoS2/mica heterojunction interface

Extremely high mobility over 5000 cm2/Vs obtained from MoS2 nanosheet transistor with NiOx Schottky gate

Optoelectronic Properties of Few-Layer MoS2 FET Gated by Ferroelectric Relaxor Polymer.

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors

Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

Controlled Growth of Bilayer-MoS2 Films and MoS2-Based Field-Effect Transistor (FET) Performance Optimization

P-type polar transition of chemically doped multilayer MoS2 transistor

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity