Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

Organic field-effect transistors with nearly non-injection barrier from source/drain electrodes to pentacene

Enhanced Charge Carrier Injection in Heterojunction Organic Field-Effect Transistor by Inserting an MoO 3 Buffer Layer

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Introduction of F-4-Tcnq/Moo3 Layers for Thermoelectric Devices Based on Pentacene

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Device simulation study of multilayer MoS 2 Schottky barrier field-effect transistors

High Performance Photoresponsive Field-Effect Transistors Based on MoS2/pentacene Heterojunction

Highly Efficient Charge Transport in a Quasi‐Monolayer Semiconductor on Pure Polymer Dielectric

High Performance Organic Field-Effect Transistor with Oxide/Metal Bilayer Electrodes

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Performance enhancement of p-type organic field-effect transistor through introducing organic buffer layers

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Improving Electron Mobility in MoS2 Field-Effect Transistors by Optimizing the Interface Contact and Enhancing the Channel Conductance Through Local Structural Phase Transition

Improving electron mobility in MoS 2 field-effect transistors by optimizing the interface contact and enhancing the channel conductance through local structural phase transition

Organic-Inorganic Heterojunction Field-Effect Transistors

Performance Improvement of Bottom-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting a Thin Polytetrafluoroethylene Buffer Layer

Pentacene thin film transistor with low threshold voltage and high mobility by inserting a thin metal phthalocyanines interlayer

Wafer-scale Transferred Multilayer MoS2 for High Performance Field Effect Transistors