Abstract:Organic field‐effect transistor (OFET) memory based on pentacene has attracted a lot of attentions due to its promising prospect of application in flexible electronics, while the high programming/erasing (P/E) gate voltages due to the existence of hole barrier at pentacene/polymer interface leaves great challenges for its commercial applications. A high‐performance pentacene‐based OFET nonvolatile memory (ONVM) with polymer blends is reported here as the charge‐trapping layer containing poly(2‐vinyl naphthalene) (PVN) and poly{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5'‐(2,2'‐bithiophene)} (N2200). The presence of N2200, an n‐type semiconductor, in blends significantly improves the memory performance of pentacene‐based memory devices based on the static‐electric effect. The electrons in N2200 are aggregated near the pentacene/polymer interface due to the electric attraction from the positively charged defects in pentacene. Furthermore, those electrons reduce the height of hole barrier and produce local easy‐transportation paths for holes between pentacene and PVN, which enables the electret‐based ONVM device with low P/E voltages, fast P/E speeds, large mobility and stable multilevel data‐storage ability in ambient air. By introducing poly{[N,N‐bis(2‐octyldodecyl) naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5‐(2,2‐bithiophene)} (N2200) into electret, the hole barrier at the pentacene/electret interface in organic memory can be modulated, and local easy‐transportation paths for holes between pentacene and electret are produced. The memory can obtain endurance over 1000 cycles, multilevel data‐storage ability, and stable retention over 104 s by adjusting the composition of N2200 in N2200‐electret blends.

Performance improvement of pentacene organic field-effect transistor through introducing polymer buffer layers

Performance enhancement of p-type organic field-effect transistor through introducing organic buffer layers

Performance enhancement of poly(3-hexylthiophene) organic field-effect transistor by inserting poly(methylmethacrylate) buffer layer

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Improving the Performance of the Organic Thin-Film Transistors with Thin Insulating Lithium Fluoride Buffer Layer

Enhanced Performance of Organic Field‐Effect Transistor with Bi‐Functional N‐Type Organic Semiconductor Layer

High-performance flexible pentacene transistor memory with PTCDI-C<sub>13</sub> as N-type buffer layer

High‐Performance Pentacene‐Based Field‐Effect Transistor Memory Using the Electrets of Polymer Blends

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

High-mobility flexible pentacene-based organic field-effect transistors with PMMA/PVP double gate insulator layers and the investigation on their mechanical flexibility and thermal stability

Increased Mobility And On/Off Ratio In Organic Field-Effect Transistors Using Low-Cost Guanine-Pentacene Multilayers

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Interfacial Modification And Memory Effect In Pentacene-Based Phototransistors

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

[6,6]-Phenyl-C61-butyric acid dimethylamino ester as a cathode buffer layer for high-performance polymer solar cells

Molybdenum disulfide field-effect transistors with enhanced charge-injection by inserting ultrathin pentacene layer under source/drain electrodes

Carrier concentration increase in OFETs with interface barrier and Fermi level difference

Study of Effect of Inserted Pentacene Layer in ITO/P(VDF-TrFE)/α-NPD/Au Capacitor Using Electric-Field-induced Optical Second-Harmonic Generation and Displacement Current