Carrier concentration increase in OFETs with interface barrier and Fermi level difference

Xueqiang Liu,Haobo Kang,Ran Yang
DOI: https://doi.org/10.1051/epjap/2020200057
2020-04-01
The European Physical Journal Applied Physics
Abstract:It was found that interface barrier is beneficial to form accumulation heterojunction in organic semiconductor. A new theoretical model has been established with combined effect of interface barrier and E F level difference between p-type and n-type materials. The organic pn-heterojunction has been put forward in OFETs for further research, 2 nm perylene diimide (PDI) and its derivatives (PDI-1)/(PDI-2) are used as discontinuous films to modify pentacene OFETs. The accumulative effect will be further enhanced under the joint effect of interface barrier and greater E F level difference. With the downgrading of LUMO level for n-type materials, the hole concentration in pentacene was increased by 12.3 times, 36.9 times and 107.4 times respectively, and V T shifted from −6.90 V to −2.67 V, 0.64 V and 6.82 V, the OFETs performance have been optimized efficiently, and the devices can be converted from enhancement-mode to depletion-mode. The LUMO level of PDI-2 was pinned to the E F level of pentacene has been verified by employing the organic-organic interface energy level alignment (OOI ELA) theory. The dramatic increase of carrier concentration is theoretically revealed at both sides of pn-heterojunction.
physics, particles & fields, nuclear
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