Abstract:Inducing an inversion layer in organic semiconductors is a highly nontrivial, but critical, achievement for producing organic field-effect transistor (OFET) devices, which rely on the generation of inversion, accumulation, and depletion regimes for successful operation. In recent years, a major milestone was reached: an OFET was made to successfully operate in the inversion-mode for the first time. Here, we develop a pulsed bias technique to characterize the dopant type of any organic material system, without prior knowledge or characterization of the material in question. We use this technique on a pentacene/PTCDI heterostructure and thus deduce that pentacene is n-doped by impurities. Additionally, through tip-induced band-bending, we generate inversion, depletion, and accumulation regimes over a 20~nm radius, three monolayer thick n-doped pentacene island. Our findings demonstrate that nanometer-scale lateral extent and thickness are sufficient for an OFET device to operate in the inversion regime.

What problem does this paper attempt to address?

The key problem that this paper attempts to solve is: how to induce the formation of an inversion layer in organic semiconductors, which is a crucial but extremely challenging achievement in the manufacturing of organic field - effect transistor (OFET) devices. Specifically, the authors developed a pulsed - bias technique to characterize the doping type of any organic material system without prior knowledge or characterization of these materials. Through this method, they studied the pentacene and perylene - 3,4,9,10 - tetracarboxylic dianhydride (PTCDI) heterostructures and found that pentacene was impurity n - type doped. ### Core problems of the paper 1. **Inducing the inversion layer**: - Generating inversion, accumulation, and depletion regions in organic semiconductors is the key to the successful operation of OFETs. - Previous studies have achieved the first successful operation of OFETs in the inversion mode. 2. **Characterizing the doping type**: - A pulsed - bias technique was developed, which can determine the doping type of organic materials without prior knowledge of material properties. 3. **Charge transport and carrier generation at the nanoscale**: - A combined method of non - contact atomic force microscopy (nc - AFM) and Kelvin probe force spectroscopy (KPFS) was used to study charge transport and carrier generation at the nanoscale. ### Experimental methods and techniques - **Pulsed - bias technique**: Used to characterize the doping type of organic material systems. - **Combination of nc - AFM and KPFS**: Provides structural information and measures charge distribution. - **Frequency - shift measurement**: By changing the bias voltage and observing the change in frequency shift, the doping type and carrier behavior of the semiconductor can be judged. ### Main findings - **n - type doping of pentacene**: It was experimentally verified that pentacene was impurity n - type doped. - **Generation of inversion, depletion, and accumulation regions**: These regions were generated within a radius of about 20 nm through tip - induced band bending. - **Operation of nanoscale OFETs**: It was demonstrated that a 2.1 - nm - thick pentacene layer can locally reach inversion, which provides the possibility for manufacturing nanoscale OFETs. ### Formula explanations Some of the formulas involved in the paper include: - Relationship between frequency shift and capacitance: \[ \Delta f \propto \frac{\partial F_{\text{elec}}}{\partial z} = \frac{1}{2} \frac{\partial^2 C_{ts}}{\partial z^2} (V_{DC} - V_{CPD})^2 \] where \( C_{ts} \) is the tip - sample capacitance, \( V_{DC} \) is the applied bias voltage, and \( V_{CPD} \) is the contact potential difference. - Charge calculation in semiconductors: \[ Q_s = -\text{sgn}(u) \frac{kT}{q} \epsilon \left( L_D \left( e^{u - u} - 1 + \frac{n_i^2}{N_D^2} (e^{-u + u} - 1) \right)^{1/2} \right) \] where \( u = \frac{qV_s}{kT} \) is the normalized surface potential, \( L_D = \left( \frac{\epsilon kT}{2 N_D q^2} \right)^{1/2} \) is the Debye length, \( N_D \) is the doping concentration, and \( q \) is the elementary charge. These findings are of great significance for understanding the physical properties and behaviors of organic semiconductors at the nanoscale and lay the foundation for further research on organic photovoltaic devices.

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