Abstract:We report on the influence of the dielectric/organic interface properties on the electrical characteristics of field-effect transistors based on Poly-phenylenevinylene derivatives. We observe a direct influence of the dielectric surface on the field-effect mobility as well as on the charge injection at the source electrode, despite the fact that we used a top contact transistor structure.We find that the presence of traps at the dielectric surface, decreases the hole mobility and increases the threshold voltages. By treating the silicon dioxide dielectric surface with gas phase molecules such as octadecyltrichlorosilane (OTS) and hexamethyldisilazane (HMDS) the hole mobility improves and the threshold voltage slightly increases.The effects of a dielectric polymer layer spin coated onto silicon dioxide substrates before deposition of the semiconductor polymer can be related to the density of the oxydryl groups (-OH), which are the most efficient traps for the charges flowing in the device. We use different polymer species such as polyvinylalchol (PVA), polymethylmetacrilate (PMMA) and a cyclotene derivative (B-staged bisbenzocyclobutene or BCB). The elimination of the -OH groups and of other traps, produces the same effect observed with HMDS coupled to a more pronounced enhancement of the threshold voltage, with the exception of PMMA. The electrical characteristics obtained with HMDS and PMMA polymer dielectrics are the highest reported to date for PPV-based field-effect transistors.We confirm that the purification of the active material is crucial to enhance the device performances and to achieve a better device to device reproducibility.We also investigated the effect of the dispersion of a phosphorescent dye into the active polymeric material. The electrical characteristics of OFETs with HMDS or PMMA dielectric with and without dye doping are compared.

Study of Effect of Inserted Pentacene Layer in ITO/P(VDF-TrFE)/α-NPD/Au Capacitor Using Electric-Field-induced Optical Second-Harmonic Generation and Displacement Current

Organic field-effect transistors with nearly non-injection barrier from source/drain electrodes to pentacene

Enhancement of Memory Properties of Pentacene Field-Effect Transistor by the Reconstruction of an Inner Vertical Electric Field with an N-Type Semiconductor Interlayer.

Introduction of F-4-Tcnq/Moo3 Layers for Thermoelectric Devices Based on Pentacene

Effect of Inserting Teflon As A Surface Modification Layer on Bottom-Contact Pentacene-Based Organic Thin-Film Transistors

Effects of the F(4)Tcnq-Doped Pentacene Interlayers on Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using a High-K PVA/Low-K PVP Bilayer As the Gate Insulator.

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Interfacial Modification And Memory Effect In Pentacene-Based Phototransistors

Influence Of The Dielectric And Of The Active Layer Doping On The Fet Mobility In Ppv-Based Devices

Performance Improvement of Top-Contact Pentacene-Based Organic Thin-Film Transistors by Inserting an Ultrathin Teflon Carrier Injection Layer

Performance improvement of pentacene organic field-effect transistor through introducing polymer buffer layers

Enhanced Performance of Organic Field‐Effect Transistor Memory by Hole‐Barrier Modulation with an N‐Type Organic Buffer Layer between Pentacene and Polymer Electret

High performance pentacene organic field-effect transistors consisting of biocompatible PMMA/silk fibroin bilayer dielectric

High-performance flexible pentacene transistor memory with PTCDI-C<sub>13</sub> as N-type buffer layer

Improved Pentacene Growth Continuity for Enhancing the Performance of Pentacene-Based Organic Thin-Film Transistors

Teflon/SiO 2 bilayer passivation for improving the electrical reliability of pentacene-based organic thin-film transistors

Observation of Hole Injection Boost Via Two Parallel Paths in Pentacene Thin-Film Transistors by Employing Pentacene: 4, 4″-Tris(3-methylphenylphenylamino) Triphenylamine: MoO3 Buffer Layer

Improved Performance of Organic Thin Film Transistor with an Inorganic Oxide/Polymer Double-Layer Insulator

Performance Improvement of Pentacene-Based Organic Thin-Film Transistor with the Planar Bottom-Contact Structure and the Bi-Layer Gate Dielectric

Performance Enhancement of Pentacene-Based Organic Thin-Film Transistors Using 6,13-Pentacenequinone As a Carrier Injection Interlayer