Abstract:Two-dimensional (2D) materials with the atomically thin thickness have attracted great interest in the postMoore's Law era because of their tremendous potential to continue transistor downscaling and offered advances in device performance at the atomic limit. However, the metal-semi-conductor contact is the bottleneck in field-effect transistors (FETs) integrating 2D semiconductors as channel materials. A robust and tunable doping method at the source and drain region of 2D transistors to minimize the contact resistance is highly sought after. Here we report a stable carrier doping method via the mild covalent grafting of maleimides on the surface of 2D transition metal dichalcogenides. The chemisorbed interaction contributes to the efficient carrier doping without degrading the high-performance carrier transport. Density functional theory results further illustrate that the molecular functionalization leads to the mild hybridization and the negligible impact on the conduction bands of monolayer MoS2, avoiding the random scattering from the dopants. Differently from reported molecular treatments, our strategy displays high thermal stability (above 300 degrees C) and it is compatible with micro/nano processing technology. The contact resistance of MoS2 FETs can be greatly reduced by similar to 12 times after molecular functionalization. The Schottky barrier of 44 meV is achieved on monolayer MoS2 FETs, demonstrating efficient charge injection between metal and 2D semiconductor. The mild covalent functionalization of molecules on 2D semiconductors represents a powerful strategy to perform the carrier doping and the device optimization.

Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Facile one-pot iodine gas phase doping on 2D MoS2/CuS FET at room temperature

P-type polar transition of chemically doped multilayer MoS2 transistor

Electrical characterization of MoS2 field-effect transistors with different dielectric polymer gate

Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Reversing The Polarity Of Mos2 With Ptfe

Charged-impurity free printing-based diffusion doping in molybdenum disulfide field-effect transistors

Yttrium-induced phase-transition technology for forming perfect ohmic contact in two-dimensional MoS2 transistors

Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid-Structure.

Tuning the Electronic and Photoelectronic Properties of Two-Dimensional MoSe 2 Thin Films by In Situ V-Doping

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

The effect of the dopant’s reactivity for high-performance 2D MoS2 thin-film transistor

Electron-doping-enhanced Trion Formation in Monolayer Molybdenum Disulfide Functionalized with Cesium Carbonate.

Mobility enhancement and highly efficient gating of monolayer MoS2 transistors with Polymer Electrolyte

Controlled p-Type Doping of MoS2 Monolayer by Copper Chloride