Abstract:Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Suppression of surface optical phonon scattering by AlN interfacial layers for mobility enhancement in MoS2 FETs

Enhancing the Performance of MoS2 Field-Effect Transistors Using Self-Assembled Monolayers: A Promising Strategy to Alleviate Dielectric Layer Scattering and Improve Device Performance

Enhancement of Carrier Mobility in Mos2 Field Effect Transistors by A Sio2 Protective Layer

Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Charged-impurity free printing-based diffusion doping in molybdenum disulfide field-effect transistors

Performance and stability improvement of CVD monolayer MoS2 transistors through HfO2 dielectrics engineering

Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

In situ transport measurements reveal source of mobility enhancement of MoS2 and MoTe2 during dielectric deposition

Enhanced contact resistance reduction in MoS2 transistors via ultrathin LiPON electrode interface doping

Multilayer MoS2 Transistors Enabled by a Facile Dry-Transfer Technique and Thermal Annealing

Transport Properties of MoO&lt;sub&gt;3&lt;/sub&gt; Contacted Few-Layer MoS&lt;sub&gt;2&lt;/sub&gt; N-type Field-Effect Transistor

Contact Resistance Optimization in MoS${_2}$ Field-Effect Transistors through Reverse Sputtering-Induced Structural Modifications

Strain Engineering for Enhancing Carrier Mobility in MoTe2 Field-Effect Transistors

Toward High-mobility and Low-power 2D MoS2 Field-effect Transistors