Abstract:This work provides a p‐type doping technique using argon plasma and subsequent oxygen exposure to transform the intrinsically available depletion mode (D‐mode) MoS2 field‐effect transistors (FETs) to enhancement mode (E‐mode) for their (n‐channel metal‐oxide semiconductor) NMOS/(complementary metal‐oxide semiconductor) CMOS‐logic‐based applications. This technique reduces contact resistance and achieves high‐performance top‐gated E‐mode MoS2 FETs with IOFF (at zero gate bias) in tens of picoamperes and ION/IOFF in seven orders. The intrinsic n‐type behavior and unavailability of the appropriate p‐type doping method for MoS2 allows only n‐type conduction with depletion mode (D‐mode) characteristics and forbids the implementation of p‐type field‐effect transistors (FETs). The D‐mode characteristic results in a high off‐current (IOFF) at zero gate bias, which limits the usage of MoS2 FETs for industry‐scale (n‐channel metal‐oxide semiconductor) NMOS/(complementary metal‐oxide semiconductor) CMOS‐logic‐based applications due to significant power dissipation. Both these issues, i.e., i) missing technique for p‐type doping and ii) D‐mode operation are addressed here through the application of argon (Ar) plasma and subsequent O2 bath. Here, Ar plasma results in the physical removal of sulfur (S) atoms from the MoS2 surface, introducing sulfur vacancies, and the O2 bath results in the chemical bonding of O2 molecules with molybdenum (Mo) atoms at the introduced S vacancy sites. This leads to the formation of shallow acceptor states near the valance band (VB) of MoS2, resulting in p‐type doping and enhancement mode (E‐mode) characteristics of MoS2 FETs. Moreover, using Ar plasma results in the reduction of contact resistance (RC) of E‐mode MoS2 FETs and hence facilitates achieving high‐performance top‐gated E‐mode MoS2 FETs with IOFF (at zero gate bias) in tens of picoamperes and ION/IOFF in seven orders.

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Facile one-pot iodine gas phase doping on 2D MoS2/CuS FET at room temperature

Doping against the native propensity of MoS2: degenerate hole doping by cation substitution.

Low-damaged P-Type Doping of MoS2 Using Direct Nitrogen Plasma Modulated by Toroidal-Magnetic-field.

Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure

Implementing Remote Doping and Suppressed Scattering in MoS<inline-formula> &Lt;tex-Math Notation="latex">$_{\text{2}}$</tex-Math> &Lt;/inline-Formula> Field-Effect Transistor Using CMOS-Compatible Process

A Two-Dimensional MoS 2 Device and CMOS Inverter Based on the Plasma Immersion Doping Technique

Controlled p-Type Doping of MoS2 Monolayer by Copper Chloride

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

A "click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Reconfiguration of Intrinsic Depletion‐Mode Characteristics of MoS2 Field‐Effect Transistors to High‐Performance Enhancement‐Mode Operation Using an Argon Plasma‐Induced p‐Type Doping Technique

Implementing Remote Doping and Suppressed Scattering in MoS2 Field-Effect Transistor Using CMOS-Compatible Process

In-situ and tunable nitrogen-doping of MoS2 nanosheets

Ambipolar MoS 2 Field Effect Transistor by Spatially Controlled Chemical Doping

Large Size Few-Layer Ambipolar MoS2 Metal-Oxide-Semiconductor Field Effect Transistors by Nitrogen Plasma Doping

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

High-quality MoS2 monolayers with largely enhanced electrical properties by plasma-treated SiO2/Si substrates based chemical vapor deposition