Abstract:Monolayer MoS2 has emerged as one of the most promising candidate materials for future semiconductor devices because of its fascinating physical properties and optoelectronic performance. Recently, the utilization of alkali metal compounds as promoters in CVD growth has been demonstrated to be a facile strategy for growing monolayer MoS2 and other 2D TMDs with large domain sizes. In this work, we systematically investigated the residues derived from alkali metal compounds and the spontaneous n-doping effect on monolayer MoS2 in alkali metal compound-promoted CVD growth. When using NaOH and other alkali metal compounds as promoters, it is found that the Raman peak of the A1g mode red shifted with a broadening width and the PL intensity of the A peak decreased with a red shift, which was attributed to the spontaneous n-doping effect during growth. Moreover, the growth using varying amounts of NaOH promoter suggests that the n-doping level could be controlled by the amount of promoter. X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary-ion mass spectroscopy (TOF-SIMS) showed the existence of cation-derived residues in the form of a Na-O cluster physiosorbed on top of monolayer MoS2, which was also confirmed by the transfer experiment. The NaOH treatment experiment and density functional theory (DFT) calculations demonstrate that sodium hydroxide clusters, which could be converted from a combination of Na-O clusters and water vapor, could produce an n-doping effect on monolayer MoS2. This study provides a facile route to controllably grow monolayer 2D materials with a desired doping level without further treatment.

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Controllable P-Type Doping of 2D MoS2via Sodium Intercalation for Optoelectronics

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Ab-initio study on the possible doping strategies for MoS$_2$ monolayers

Controlled p-Type Doping of MoS2 Monolayer by Copper Chloride

Electrical Properties Of Compound 2d Semiconductor Mo1-Xnbxs2

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Spontaneous n-Doping in Growing Monolayer MoS 2 by Alkali Metal Compound-Promoted CVD

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Controllable P-type Doping of Monolayer MoS2 with Tantalum by One-step Chemical Vapor Deposition

Electronic structures of defects and magnetic impurities in MoS2 monolayers

Dipole doping effect in MoS2 field effect transistors based on phase transition of ferroelectric polymer dopant

Insight into the Growth of Non-uniform Vanadium-Doped Molybdenum Disulfide for Tunable Electronic Properties

Two-dimensional electronic transport and surface electron accumulation in MoS2

Realizing P-Type MoS2 with Enhanced Thermoelectric Performance by Embedding VMo2S4 Nanoinclusions

In-situ and tunable nitrogen-doping of MoS2 nanosheets

Wafer-Scale Oxygen-Doped MoS2 Monolayer.