Abstract:The fine tuning of electro optic properties is critical for high performing technologies. This is now obtainable with advanced nanostructures, particularly 2D monolayer materials such as molybdenum disulfide (MoS2). Using spin-polarized periodic density functional theory (DFT), we find the direct band gap (K→K') can be chemically tuned with covalently bound functional groups. With an electron withdrawing group such as fluorine, we observe one occupied α and one unoccupied β bands, which correspond to the addition of an α electron and a β hole; confirmed with the spin difference (Qα-Qβ) being 1. By increasing the electron donating behavior with replacement of F by H and then by Me, the occupied (valence) α band shifts upwards in energy relative to the Fermi energy, and the unoccupied β shifts down until they are in contact with the Fermi energy. In addition, both the α and β unoccupied (conduction) bands of the MoS2 shift down, relative to the Fermi energy, until in contact with the Fermi and the system can be described as metallic. The MoS2+F system is thus a small gap semiconductor (0.96 eV), and the MoS2+H and MoS2+Me gaps are 0.21 eV and 0 eV (metallic), respectively. Spin density calculations illustrate the semi localized nature of the α spin, however this is not formed from the radical of the functionalizing group, but rather, the resulting unpaired electron is on the sulfur atom after radical abstraction to form a covalent bond with the group. 5 and 6 membered heterocycles were studied and further confirm these observations. Distinct from typical functional groups such as phenyl, we find evidence for the covalent bonding of pyrrole, cyclopentadiene and pyridine to a sulfur atom of the MoS2 surface, from the new α and β bands in the band structure. The charge carrier nature of the 2D monolayers of functionalized MoS2 can be further tuned with charge doping (hole or electron), such that even the metallic systems can be returned to semiconducting states, but importantly, as p type conductors. Semi localization of the spin states and control of the band gap can be generalized to other covalently functionalized 2D materials and appears suitable for electronics applications, such as photoluminescence devices, contact-free transistors and quantum communication.

Electrical Properties Of Compound 2d Semiconductor Mo1-Xnbxs2

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

One-Step Synthesis of Metal/Semiconductor Heterostructure NbS2/MoS2

Niobium and rhenium doping in MoSe2 monolayer during molecular beam epitaxy: Shallow dopants and defect proliferation

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Substitutional p-Type Doping in NbS2 -MoS2 Lateral Heterostructures Grown by MOCVD

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Ab initio study of bilateral doping within the MoS2-NbS2 system

Two-dimensional electronic transport and surface electron accumulation in MoS2

Effect of niobium doping on excitonic dynamics in MoSe 2

Control of Charge Carriers and Band Structure in 2D Monolayer Molybdenum Disulfide via Covalent Functionalization.

Metallic Transport in Monolayer and Multilayer Molybdenum Disulfides by Molecular Surface Charge Transfer Doping

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Field Effect Properties of Single-Layer MoS 2(1− X ) Se 2 X Nanosheets Produced by a One-Step CVD Process

Electronic and optical properties of MoSe2 monolayer in the presence of Nb impurity: A first principle study

Tuning Electrical and Optical Properties of MoSe2 Transistors Via Elemental Doping

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Controllable 2H/3R phase transition and conduction behavior change in MoSe2:Nb substitution by high pressure synthesis for promising thermoelectric conversion

Quasi‐Continuous Tuning of Carrier Polarity in Monolayered Molybdenum Dichalcogenides Through Substitutional Vanadium Doping

Modulating Carrier Density and Transport Properties of Mos2 by Organic Molecular Doping and Defect Engineering