Abstract:The multi-layer 2D materials have attracted increasing interest because the intriguing properties can be achieved by various strategies, such as incorporating ions into the interlayer, turning angles between two layers, and applying strain, which may lead to wide applications in catalysis, ion-batteries, superconductors, and nanodevices. In this work, there is a proposal to tune the electronic and magnetic properties of MoS2 bilayer for spintronics by incorporating transition-metal elements into its interlayer (denoted as TM-MoS2) based on the density-functional theory (DFT) calculations. It is shown that TM-MoS2 is thermodynamically stable and can be achieved due to low incorporation energy. It is found that n-type doping or intrinsic semiconducting can be realized in MoS2 bilayer by controlling the incorporated transition-metal atoms, accompanied with a rich variety of magnetic orderings. It is further shown that the electronic and magnetic properties of TM-MoS2 can be substantially tuned by applying compression. Finally, it is demonstrated that the systems can be used as a spin filter, as supported by the spin-polarized transport calculation. The findings illustrate that the physical properties of layered materials can be controlled by simple interlayer incorporation and shed light on the application of TM-MoS2 as a fundamental building block for nanoelectronics and spintronics.

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Tuning CO sensing properties and magnetism of MoS2 monolayer through anchoring transition metal dopants

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Tuning the Electronic Properties of Bondings in Monolayer MoS2 Through (au, O) Co-Doping

The Effects of Nonmetal Dopants on the Electronic, Optical, and Catalytic Performances of Monolayer WSe2 by a First-Principles Study

Interlayer-Incorporation of MoS<sub>2</sub> (TM-MoS<sub>2</sub>) to Achieve Unique Magnetic and Electronic Properties for Spintronics

In-situ and tunable nitrogen-doping of MoS2 nanosheets

Functionalization of monolayer MoS2 by substitutional doping: A first-principles study

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Simultaneously Engineering Electron Conductivity, Site Density and Intrinsic Activity of MoS2 Via the Cation and Anion Codoping Strategy

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

First Principles Study on Molecule Doping in MoS2 Monolayer

Electronic Structures, Magnetic Properties and Band Alignments of 3d Transition Metal Atoms Doped Monolayer MoS2

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Tuning of Electronic States and Magnetic Polarization in Monolayered MoS2 by Codoping with Transition Metals and Nonmetals

Investigation of Sulfur Doping in Mn-Co Oxide Nanotubes on Surface-Enhanced Raman Scattering Properties

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition.

Modulating The Atomic And Electronic Structures Through Alloying And Heterostructure Of Single-Layer Mos2

Reconfiguring Crystal and Electronic Structures of MoS2 by Substitutional Doping