Abstract:Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS2 crystals through a single-step deposition method to improve the photodetection ability of MoS2 flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS2 lattice and the Sn dopant leads to an additional strain in the host lattice. The detection performance of Sn-doped MoS2 flakes exhibits an order of magnitude improvement (up to Rλ ≈ 29 A/W, EQE ≈ 7.8 × 103%, D* ≈ 1011 nm) as compared with that of pure MoS2 flakes, which is associated with electrons released from Sn atoms. Such a substitutional doping process in TMDs provides a potential platform to tune the on-demand properties of these 2D materials.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.1c07286?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.1c07286</a>.Statistics of the sample morphology; thickness-dependent Raman spectra; XPS of atomically thin SnS2 flakes; EDX spectrum, the STEM image of the center zone; stability of photoresponse after a month; intensity-dependent I–V curves, comparison with pristine MoS2 flakes; and output/transfer curves and the band alignment diagram (<a class="ext-link" href="/doi/suppl/10.1021/acsami.1c07286/suppl_file/am1c07286_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Controlled Gas Molecules Doping of Monolayer MoS2 Via Atomic-Layer-Deposited Al2O3 Films.

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Controlled Doping Engineering in 2D MoS2 Crystals Toward Performance Augmentation of Optoelectronic Devices.

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

In Situ Doping Effect in Monolayer MoS2 Via Laser Irradiation

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices

Spontaneous N-Doping in Growing Monolayer MoS2 by Alkali Metal Compound-Promoted CVD.

Spontaneous n-Doping in Growing Monolayer MoS 2 by Alkali Metal Compound-Promoted CVD

Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer

Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer (Small Methods 6/2021)

First Principles Study on Molecule Doping in MoS2 Monolayer

Tunable Doping Strategy for Few-Layer MoS2 Field-Effect Transistors via NH3 Plasma Treatment

Selective Surface Modification and Layer Thinning of MoS2 Via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

One-step growth of centimeter-scale doped multilayer MoS<sub>2</sub> films by pulsed laser-induced synthesis

Selective Surface Modification and Layer Thinning of MoS 2 via Ultraviolet-Light Irradiation in an Ionic Solution: Implications for Multifunctional Nanoelectronic Devices

Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition

The Evolution of MoS2 Properties under Oxygen Plasma Treatment and Its Application in MoS2 Based Devices