Abstract:The discovery of graphene has put the spotlight on other layered materials including transition metal dichalcogenites (TMD) as building blocks for novel heterostructures assembled from stacked atomic layers. Molybdenum disulfide, MoS2, a semiconductor in the TMD family, with its remarkable thermal and chemical stability and high mobility, has emerged as a promising candidate for post-silicon applications such as switching, photonics, and flexible electronics. Since these rely on controlling the position of the Fermi energy (EF), it is crucial to understand its dependence on doping and gating. Here we employed scanning tunneling microscopy (STM) and spectroscopy (STS) with gating capabilities to measure the bandgap and the position of EF in MoS2, and to track its evolution with gate voltage. For bulk samples, the measured bandgap (~1.3eV) is comparable to the value obtained by photoluminescence, and the position of EF (~0.35eV) below the conduction band, is consistent with n-doping reported in this material. Using topography together with spectroscopy we traced the source of the n-doping in bulk MoS2 samples to point defects, which we attribute to S vacancies. In contrast, for thin films deposited on SiO2, we found significantly higher levels of n-doping that cannot be attributed to S vacancies. By combining gated STS with transport measurements in a field effect transistor (FET) configuration, we demonstrate that the higher levels of n-doping in thin film samples is due to charge traps at the sample-substrate interface.

Tuning Electronic and Optical Properties of Monolayer MoS2 by Transition Metal and Nitrogen Co-Doping

Transition Metal (mn, Fe, Co, Ni) and Nitrogen Co-Doping for Improving the Photocatalytic Activity of Monolayer MoS2

Hole Doping In Epitaxial Mose2 Monolayer By Nitrogen Plasma Treatment

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Tuning the electronic properties of MoSi2N4 by molecular doping: A first principles investigation

Modulation of Gas Adsorption and Magnetic Properties of Monolayer-MoS2 by Antisite Defect and Strain

Tuning of Electronic States and Magnetic Polarization in Monolayered MoS2 by Codoping with Transition Metals and Nonmetals

Tuning Electrical and Optical Properties of MoSe2 Transistors Via Elemental Doping

Tune the electronic structure of MoS<sub>2</sub> homojunction for broadband photodetection

Bandgap and doping effects in MoS2 measured by Scanning Tunneling Microscopy and Spectroscopy

Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping

Electronic Structures, Magnetic Properties and Band Alignments of 3d Transition Metal Atoms Doped Monolayer MoS2

Improved Optical and Electronic Properties of Single-Layer MoS2 by Co Doping for Promising Intermediate - Band Materials

Improved Photocatalytic Property of Monolayer MoS2 by B and F Co-Doping: First Principles Study

In-situ and tunable nitrogen-doping of MoS2 nanosheets

Tuning the Optical and Electrical Properties of MoS2 by Selective Ag Photo-Reduction

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Investigating Structural, Electronic, Magnetic, and Optical Properties of Co-doped and Co-X (X = Fe, Mn) Co-Doped MoS2 for Optoelectronic Applications

A First-Principles Study of Impurity Effects on Monolayer MoS2: Bandgap Dominated by Donor Impurities

Effects of Cr, Sn, Co Doping on Electronic and Optical Properties of Layered Two-Dimensional Material MoSi<sub>2</sub>N<sub>4</sub>

First Principles Study on Molecule Doping in MoS2 Monolayer