Abstract:Heterogeneous atom doping has been proven as an efficient route to tune the physical and chemical properties of semiconductors, represented by the technically mature boron and phosphorus doping in bulk silicon. In the two-dimensional (2D) transitional-metal dichalcogenides semiconductors, substitutional doping dominates compared with the interstitial sites doping due to the ultrathin nature of 2D materials. However, unintentional doping can also obscure the structure-property relationship and cause the deviations from the ideally optical/electrical performances. Here, substitutional carbon doping into the monolayer molybdenum disulfide (MoS2) lattice during the normal chemical vapor deposition (CVD) synthesis process is discovered through a thorough analysis of the intermediate and final reaction products. The carbon originates from the relatively low-purity molybdenum precursor, which can be completely eliminated when a high-purity molybdenum precursor is utilized. The carbon-doped monolayer MoS2 exhibits mid-gap states brought by the Mo-d, S-p, and C-p orbital hybridization and gradually reduced band gaps as the doping concentration increases. As a result, the suppressed photoluminescence (PL) intensity and red shift PL position are observed. The finding is fundamental for understanding the unintentional carbon doping process in CVD growth of 2D semiconductors and identifies a source for the inconsistent PL performances in the CVD-derived samples.

Improved Optical and Electronic Properties of Single-Layer MoS2 by Co Doping for Promising Intermediate - Band Materials

Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS<sub>2</sub> with Tunable Electronic Properties

Co Doped MoS2 As Bifunctional Electrocatalyst for Hydrogen Evolution and Oxygen Reduction Reactions

Intrinsically Substitutional Carbon Doping in CVD-Grown Monolayer MoS2 and the Band Structure Modulation

Tuning Electronic and Optical Properties of Monolayer MoS2 by Transition Metal and Nitrogen Co-Doping

Improved Photocatalytic Property of Monolayer MoS2 by B and F Co-Doping: First Principles Study

Doping MoS2 Monolayer with Nonmetal Atoms to Tune Its Electronic and Magnetic Properties, and Chemical Activity: a Computational Study

Electronic and optical properties of Cr / Cl co-doped in single-layer MoS 2 : A first principles study

Transition Metal (mn, Fe, Co, Ni) and Nitrogen Co-Doping for Improving the Photocatalytic Activity of Monolayer MoS2

Charge And Magnetic States Of Mn-, Fe-, And Co-Doped Monolayer Mos2

Inside Back Cover: Wafer‐Scale Oxygen‐Doped MoS 2 Monolayer (Small Methods 6/2021)

Substitutional Doping: In Situ Oxygen Doping of Monolayer MoS 2 for Novel Electronics (Small 42/2020)

Wafer-Scale Oxygen-Doped MoS2 Monolayer.

First Principles Study of the Photoelectric Properties of Alkaline Earth Metal (Be/Mg/Ca/Sr/Ba)-Doped Monolayers of MoS2

Study on photoelectric properties of manganese-doped MoS2 thin films

In Situ Oxygen Doping of Monolayer MoS2 for Novel Electronics.

Improving Optical and Electronic Performance of Monolayer Silicon Carbide Via Metal Doping

Enhancing Photocatalytic Activity in Monolayer MoS2 by Charge Compensated Co-Doping with P and Cl: First Principles Study

Intermediate Bands of MoS2 Enabled by Co Doping for Enhanced Hydrogen Evolution

Substitutional doping at S site of MoS2/G heterostructure: The influence on voltage-current and electronic characteristics

Electronic and optical properties of S vacancy and Br and I doped monolayer MoS 2 : a first-principle study