Enhanced Performance of a CVD MoS 2 Photodetector by Chemical in Situ n-Type Doping.
Songyu Li,Xiaoqing Chen,Famin Liu,Yongfeng Chen,Beiyun Liu,Wenjie Deng,Boxing An,Feihong Chu,Guoqing Zhang,Shanlin Li,Xuhong Li,Yongzhe Zhang
DOI: https://doi.org/10.1021/acsami.9b00856
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:Transition metal dichalcogenides (TMDs) are a category of promising 2D materials for the optoelectronic devices, while the unique characteristics include tunable band-gap, non-dangling bonds as well as compatibility to large-scale fabrication, for instance, chemical vapor deposition (CVD). MoS is one of the first TMDs which is well-studied in the photodetection area widely. However, low photoresponse restricts its applications in photodetectors, unless the device is applied with ultrahigh source-drain voltage (V) and gate voltage (V). In this work, the photoresponse of MoS photodetector were improved by a chemically in-situ doping method using gold chloride hydrate. The responsivity and specific detectivity were increased to 99.9 A/W and 9.4×10 Jones under low V (0.1 V) and V (0 V), which are 14.6 times and 4.8 times higher than those of pristine photodetector, respectively. Since, the chlorine n-type doping in CVD MoS reduces the trapping of photoinduced electrons and promotes the photogating effect. This novel doping strategy provides a great applications of high performance MoS photodetectors potentially, and lead a new avenue to enhance photoresponse for other 2D materials.