Abstract:A new SiC superjunction power MOSFET device using high-k insulator and p-type pillar with an integrated Schottky barrier diode (Hk-SJ-SBD MOSFET) is proposed, and has been compared with the SiC high-k MOSFET (Hk MOSFET), SiC superjuction MOSFET (SJ MOSFET) and the conventional SiC MOSFET in this article. In the proposed SiC Hk-SJ-SBD MOSFET, under the combined action of the p-type region and the Hk dielectric layer in the drift region, the concentration of the N-drift region and the current spreading layer can be increased to achieve an ultra-low specific on-resistance (R on,sp ). The integrated Schottky barrier diode (SBD) also greatly improves the reverse recovery performance of the device. TCAD simulation results indicate that the R on,sp of the proposed SiC Hk-SJ-SBD MOSFET is 0.67 mΩ·cm 2 with a 2240 V breakdown voltage (BV), which is more than 72.4%, 23%, 5.6% lower than that of the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET with the 1950, 2220, and 2220 V BV, respectively. The reverse recovery time and reverse recovery charge of the proposed MOSFET is 16 ns and18 nC, which are greatly reduced by more than 74% and 94% in comparison with those of all the conventional SiC MOSFET, Hk SiC MOSFET and SJ SiC MOSFET, due to the integrated SBD in the proposed MOSFET. And the trade-off relationship between the R on,sp and the BV is also significantly improved compared with that of the conventional MOSFET, Hk MOSFET and SJ MOSFET as well as the MOSFETs in other previous literature, respectively. In addition, compared with conventional SJ SiC MOSFET, the proposed SiC MOSFET has better immunity to charge imbalance, which may bring great application prospects.

High Temperature Performance of 6500V 4H-Sic MOSFET with Embedded Schottky Barrier Diode

Reliability Investigation on SiC Trench MOSFET under Repetitive Surge Current Stress of Body Diode

Design and Fabrication of 1.2kv SBD Integrated 4hsic MOSFET for Reliable Reverse Conduction

Dynamic Performance of 6.5kV/400A SiC MOSFET Module and its Gate Driver

Fabrication and Dynamic Switching Characteristics of 6.5kv400a SiC MOSFET Module

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

A Comparative Study of SiC MOSFETs with and Without Integrated SBD

Degradation of 4H-Sic MOSFET Body Diode under Repetitive Surge Current Stress

Commercialization of Highly Rugged 4H-Sic 3300 V Schottky Diodes and Power MOSFETs

High-Performance 4H-Sic Junction Barrier Schottky Diodes with Double Resistive Termination Extensions

A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode

Development of a 1200 V, 120 A SiC MOSFET module for high-temperature and high-frequency applications

High-Temperature Characterizations of a Half-Bridge Wire-Bondless SiC MOSFET Module

A novel SiC high-k superjunction power MOSFET integrated Schottky barrier diode with improved forward and reverse performance

TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode

Experimental performance comparison of six-pack SiC MOSFET and Si IGBT modules paralleled in a half-bridge configuration for high temperature applications

Compact-Interleaved Packaging Method of Power Module With Dynamic Characterization of 4H-SiC MOSFET and Development of Power Electronic Converter at Extremely High Junction Temperature

A Comparative Study of Silicon Carbide Merged PiN Schottky Diodes with Electrical-Thermal Coupled Considerations

Integrated Lateral SBD Temperature Sensor of a 4H-Sic VDMOS for Real-Time Temperature Monitoring

Numerical demonstration of SiC trench MOSFET with integrated heterojunction diode for enhanced performance