Abstract:After the successful introduction as a replacement for the SiO2 gate dielectric in metal-oxide-semiconductor field-effect transistors, HfO2 is currently one of the most studied binary oxide systems with ubiquitous applications in nanoelectronics. For years, the interest of microelectronic downscaling has focused on tuning the dielectric constant of HfO2, particularly for monoclinic and tetragonal phases. Recently, Müller et al. showed the occurrence of ferroelectricity in orthorhombic HfO2 obtained by doping with Si, Y or Al which can alter the centrosymmetric atomic structure of the elemental binary oxide. Ferroelectric HfO2 is characterized by a permanent electric dipole that can be reversed through the application of an external voltage. As all ferroelectrics, a strong coupling between the polarization and the deformation exists, a property which has allowed the development of piezoelectric sensors and actuators. However, ferroelectrics also show a coupling between the electrical polarization and the deformation gradient, defined as flexoelectricity. In essence, the free charge inside the material redistributes in response to strain gradients, inducing a net non-zero dipole moment, eventually reaching polarization reversal by the sole application of a mechanical stress. Here we show the flexoelectric effect in Al-doped hafnium oxide, using the tip of an atomic force microscope (AFM) to maximize the strain gradient at the nanometre scale. Our analysis indicates that pure mechanical force can be used for the local polarization control of sub-100 nm domains. Due to the full compatibility of HfO2 in the modern CMOS process, the discovery of flexoelectricity in hafnia paves the way for (1) nanoscopic memory bits that can be written mechanically and read electrically, (2) tip-induced reprogrammable ferroelectric-based logic and (3) electromechanical transducers.

Flexoelectronic doping of the degenerate silicon and the correlated electron behavior

Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures

Flexoelectric Engineering of Van Der Waals Ferroelectric CuInP2S6.

The flexoelectric effect in Al-doped hafnium oxide

Giant Apparent Flexoelectricity in Semiconductors Driven by Insulator-to-metal Transition

Oscillatory Hall effect from magnetoelectronic coupling in flexoelectronic silicon

Flexoelectronics of Centrosymmetric Semiconductors

Ferroelectric control of the semiconductor-metal transition in two-dimensional / ( = , ) van der Waals heterostructures and application to nonvolatile memory devices

Bending of PN junctions in flexoelectric semiconductors

Effects of flexoelectric polarization on surface potential of dielectric thin-film heterostructures: A comparative study

Mechanical Manipulation of Silicon-based Schottky Diodes via Flexoelectricity

Giant Flexoelectricity in Bent Silicon Thinfilms

Electric Modulation of Conduction in Multiferroic Ca-doped BiFeO3 Films

Highly degenerate 2D ferroelectricity in pore decorated covalent/metal organic frameworks

Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInP2S6 Via Large Strain Gradient

Doping dependent intrinsic magnetization in silicon in Ni/Si heterostructures

Flexoelectricity Modulated Electron Transport of 2D Indium Oxide

Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains

Giant optical enhancement of strain gradient in ferroelectric thin films and its physics origin

Depth profiling charge accumulation from a ferroelectric into a doped Mott insulator

Controllable Polarization and Doping in Ferroelectric In2Se3 Monolayers and Heterobilayers Via Intrinsic Defect Engineering